Power management optimized P Channel MOSFET Slkor SL2301D with trench technology and low gate charge
Key Attributes
Model Number:
SL2301D
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
RDS(on):
95mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
620mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 P-Channel
Pd - Power Dissipation:
700mW
Output Capacitance(Coss):
60pF
Input Capacitance(Ciss):
327pF
Gate Charge(Qg):
4.4nC@4.5V
Mfr. Part #:
SL2301D
Package:
SOT-23
Product Description
Product Overview
The SL2301D is a P-Channel MOSFET featuring leading trench technology for low RDS(on) and low gate charge. It is designed for applications requiring efficient power management.
Product Attributes
- Brand: SLKORMicro
- Device Code: S1D
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Electrical Characteristics | BV(BR)DSS | Drain-Source Breakdown Voltage VGS=0VID=-250A | -20 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current VDS=-20VVGS=0V | -- | -- | -1.0 | uA | |
| IGSS | Gate-Body Leakage Current VGS=10VVDS=0V | -- | -- | 100 | nA | |
| Static Electrical Characteristics | VGS(th) | Gate Threshold Voltage VDS=VGSID=-250A | -0.4 | -0.62 | -1.0 | V |
| RDS(on) | Drain-Source On-State Resistance VGS=-4.5VID=-2.5A | -- | 95 | 160 | m | |
| VGS=-2.5VID=-2.0A | -- | 140 | 250 | m | ||
| Capacitance Characteristics | CISS | Input Capacitance VDS=-10VVGS=0V f=1MHz | -- | 327 | -- | pF |
| COSS | Output Capacitance | -- | 60 | -- | pF | |
| CRSS | Reverse Transfer Capacitance | -- | 55 | -- | pF | |
| Switching Characteristics | Qg | Total Gate Charge VDD=-10VID=-1A VGS=-4.5V | -- | 4.4 | -- | nC |
| Qgs | Gate Source Charge | -- | 0.8 | -- | nC | |
| Qgd | Gate Drain Charge | -- | 1.3 | -- | nC | |
| td(on) | Turn-on Delay Time VGS=-4.5VRG=2.8 | -- | 6 | -- | nS | |
| tr | Turn-on Rise Time | -- | 31 | -- | nS | |
| td(off) | Turn-Off Delay Time | -- | 45 | -- | nS | |
| tf | Turn-Off Fall Time | -- | 40 | -- | nS | |
| Source-Drain Diode Characteristics | VSD | Forward on voltage Tj=25Is=-2.5A | -- | -- | -1.2 | V |
| IS | Diode Continuous Forward Current Tc=25C | -- | -- | -2.3 | A | |
| Absolute Maximum Ratings | VDS | Drain-Source Breakdown Voltage | -20 | -- | -- | V |
| VGS | Gate-Source Voltage | -- | -- | 10 | V | |
| TJ | Maximum Junction Temperature | -- | -- | 150 | C | |
| TSTG | Storage Temperature Range | -55 | -- | 150 | C | |
| ID | Tested Continuous Drain Current@GS=10V Tc=25C | -- | -- | -2.3 | A | |
| IDM | Pulse Drain Current Tc=25C | -- | -- | -6.0 | A | |
| PD | Maximum Power Dissipation TA=25unless otherwise noted | -- | -- | 0.7 | W | |
| RJA | Thermal Resistance Junction-to-Ambient Mounted on Large Heat Sink | -- | 178 | -- | C/W |
2409302203_Slkor-SL2301D_C20539692.pdf
Related Products
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
