20V Dual P Channel MOSFET Siliup SP2004KDTW Featuring 2KV ESD Protection for Battery Switches and DC DC Converters
Key Attributes
Model Number:
SP2004KDTW
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
700mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
700mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
2 P-Channel
Output Capacitance(Coss):
15pF
Input Capacitance(Ciss):
113pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
1.9nC@4.5V
Mfr. Part #:
SP2004KDTW
Package:
SOT-363
Product Description
Product Overview
The SP2004KDTW is a 20V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount package and is ESD protected to 2KV. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 04K
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | -4.5V | 400 | 550 | m | |
| -2.5V | 550 | 700 | m | |||
| Continuous Drain Current | ID | -0.7 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | -0.7 | A | |||
| Pulse Drain Current | IDM | Tested | -2.8 | A | ||
| Power Dissipation | PD | 150 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 833 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | 10 | uA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.35 | -0.65 | -1.00 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-500mA | 400 | 550 | m | |
| VGS=-2.5V , ID=-200mA | 550 | 700 | m | |||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-16V , VGS=0V , f=1MHz | 113 | pF | ||
| Output Capacitance | Coss | 15 | pF | |||
| Reverse Transfer Capacitance | Crss | 9 | pF | |||
| Total Gate Charge | Qg | VDS=-10V , VGS=-4.5V , ID=-300mA | 1.9 | nC | ||
| Gate-Source Charge | Qgs | 0.4 | ||||
| Gate-Drain Charge | Qg d | 0.31 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-10V VGS=-4.5V , RG=10 , ID=-200mA | 9 | nS | ||
| Turn-On Rise Time | tr | 5.7 | ||||
| Turn-Off Delay Time | td(off) | 32.6 | ||||
| Turn-Off Fall Time | tf | 20.3 | ||||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Package Information (SOT-363) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 0.90 | 1.00 | ||||
| A1 | 0.00 | 0.10 | ||||
| B | 0.10 | 0.30 | ||||
| b1 | 1.30 | |||||
| D | 1.80 | 2.20 | ||||
| E | 2.00 | 2.20 | ||||
| E1 | 1.15 | 1.35 | ||||
| e | 0.65 TYP. | |||||
| L | 0.10 | 0.25 | ||||
| L1 | 0.15 | 0.4 | ||||
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP2004KDTW | SOT-363 | 3000 |
2504101957_Siliup-SP2004KDTW_C41355132.pdf
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