High Voltage Power MOSFET Slkor SL22N65CF Featuring Superjunction Technology and Low On Resistance
Key Attributes
Model Number:
SL22N65CF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
22A
Operating Temperature -:
-55℃~+150℃
RDS(on):
170mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
4.5V@1.7mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.2pF
Number:
1 N-channel
Output Capacitance(Coss):
34pF
Pd - Power Dissipation:
100W
Input Capacitance(Ciss):
1.24nF
Gate Charge(Qg):
30.2nC@10V
Mfr. Part #:
SL22N65CF
Package:
TO-220F
Product Description
Product Overview
This Power MOSFET, produced using Slkor's advanced Superjunction MOSFET technology, is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. These devices are well-suited for high-efficiency switched-mode power supplies.
Product Attributes
- Brand: Slkor
- Model Series: SL22N65C/SL22N65CF
- Technology: Superjunction MOSFET
Technical Specifications
| Model | Parameter | Test Conditions | Min | Typ | Max | Units |
| SL22N65C/SL22N65CF | Drain-Source Breakdown Voltage (BVDSS) | VGS = 0 V, ID = 1mA | 650 | -- | -- | V |
| SL22N65C/SL22N65CF | Drain-Source Breakdown Voltage (BVDSS) | VGS = 0 V, ID = 1mA, TJ = 150 | 650 | -- | -- | V |
| SL22N65C/SL22N65CF | Zero Gate Voltage Drain Current (IDSS) | VDS = 600 V, VGS = 0 V | -- | -- | 1 | uA |
| SL22N65C/SL22N65CF | Zero Gate Voltage Drain Current (IDSS) | VDS = 480 V, TC = 125 | -- | 2 | -- | uA |
| SL22N65C/SL22N65CF | Gate-Body Leakage Current, Forward (IGSSF) | VGS = 30 V, VDS = 0 V | -- | -- | 100 | nA |
| SL22N65C/SL22N65CF | Gate-Body Leakage Current, Reverse (IGSSR) | VGS = -30 V, VDS = 0 V | -- | -- | -100 | nA |
| SL22N65C/SL22N65CF | Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = 1.7mA | 2.5 | -- | 4.5 | V |
| SL22N65C/SL22N65CF | Static Drain-Source On-Resistance (RDS(on)) | VGS = 10 V, ID = 10 A | -- | 150 | 170 | m |
| SL22N65C/SL22N65CF | Input Capacitance (Ciss) | VDS = 400 V, VGS = 0 V, f = 250KHz | -- | 1240 | -- | pF |
| SL22N65C/SL22N65CF | Output Capacitance (Coss) | VDS = 400 V, VGS = 0 V, f = 250KHz | -- | 34 | -- | pF |
| SL22N65C/SL22N65CF | Reverse Transfer Capacitance (Crss) | VDS = 400 V, VGS = 0 V, f = 250KHz | -- | 3.2 | -- | pF |
| SL22N65C/SL22N65CF | Turn-On Delay Time (td(on)) | VDS = 400 V, ID = 10 A, RG = 10 ,VGS = 10 V | -- | 12 | -- | ns |
| SL22N65C/SL22N65CF | Turn-On Rise Time (tr) | VDS = 400 V, ID = 10 A, RG = 10 ,VGS = 10 V | -- | 8 | -- | ns |
| SL22N65C/SL22N65CF | Turn-Off Delay Time (td(off)) | VDS = 400 V, ID = 10 A, RG = 10 ,VGS = 10 V | -- | 53 | -- | ns |
| SL22N65C/SL22N65CF | Turn-Off Fall Time (tf) | VDS = 400 V, ID = 10 A, RG = 10 ,VGS = 10 V | -- | 10 | -- | ns |
| SL22N65C/SL22N65CF | Total Gate Charge (Qg) | VDS = 400 V, ID = 10 A, VGS = 10 V | -- | 30.2 | -- | nC |
| SL22N65C/SL22N65CF | Gate-Source Charge (Qgs) | VDS = 400 V, ID = 10 A, VGS = 10 V | -- | 5.8 | -- | nC |
| SL22N65C/SL22N65CF | Gate-Drain Charge (Qgd) | VDS = 400 V, ID = 10 A, VGS = 10 V | -- | 15.4 | -- | nC |
| SL22N65C/SL22N65CF | Gate Resistance (RG) | f = 1MHz | -- | 1.3 | -- | |
| SL22N65C/SL22N65CF | Maximum Continuous Drain-Source Diode Forward Current (IS) | -- | -- | -- | 22 | A |
| SL22N65C/SL22N65CF | Maximum Pulsed Drain-Source Diode Forward Current (ISM) | -- | -- | -- | 57 | A |
| SL22N65C/SL22N65CF | Drain-Source Diode Forward Voltage (VSD) | VGS = 0 V, IS = 10 A | -- | -- | 1.2 | V |
| SL22N65C/SL22N65CF | Reverse Recovery Time (trr) | VDD = 400 V, IS = 10A, dIF / dt = 100 A/us | -- | 274 | -- | ns |
| SL22N65C/SL22N65CF | Reverse Recovery Charge (Qrr) | VDD = 400 V, IS = 10A, dIF / dt = 100 A/us | -- | 3.33 | -- | uC |
| SL22N65C/SL22N65CF | Drain Current - Continuous (ID) | TC = 25 | -- | -- | 22* | A |
| SL22N65C/SL22N65CF | Drain Current - Continuous (ID) | TC = 100 | -- | -- | 12* | A |
| SL22N65C/SL22N65CF | Drain Current - Pulsed (IDM) | Note 1 | -- | -- | 57* | A |
| SL22N65C/SL22N65CF | Gate-Source Voltage (VGSS) | -- | -- | 30 | -- | V |
| SL22N65C/SL22N65CF | Single Pulsed Avalanche Energy (EAS) | Note 2 | -- | 985 | -- | mJ |
| SL22N65C/SL22N65CF | Avalanche Current (IAR) | Note 1 | -- | 4 | -- | A |
| SL22N65C/SL22N65CF | Repetitive Avalanche Energy (EAR) | Note 1 | -- | 1.62 | -- | mJ |
| SL22N65C/SL22N65CF | Peak Diode Recovery dv/dt | Note 3 | -- | 20 | -- | V/ns |
| SL22N65C/SL22N65CF | MOSFET dv/dt | -- | -- | 100 | -- | -- |
| SL22N65C/SL22N65CF | Power Dissipation (PD) | TC = 25 | -- | -- | 36 | W |
| SL22N65C/SL22N65CF | Power Dissipation Derate | above 25 | -- | -- | 0.29 | W/ |
| SL22N65C/SL22N65CF | Operating and Storage Temperature Range (TJ, TSTG) | -- | -55 | -- | +150 | |
| SL22N65C/SL22N65CF | Maximum lead temperature for soldering purposes | 1/8" from case for 5 seconds | -- | -- | 260 | |
| SL22N65C/SL22N65CF | Thermal Resistance, Junction-to-Case (RJC) | -- | -- | 3.5 | -- | /W |
| SL22N65C/SL22N65CF | Thermal Resistance, Junction-to-Ambient (RJA) | -- | -- | 62.5 | -- | /W |
2309281727_Slkor-SL22N65CF_C18208657.pdf
Related Products
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
