20V Complementary MOSFET Siliup SP2026KCTW with Surface Mount SOT 363 Package and 2KV ESD Protection
Key Attributes
Model Number:
SP2026KCTW
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA;660mA
RDS(on):
250mΩ@4.5V;650mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF;14pF
Number:
-
Output Capacitance(Coss):
19pF;20pF
Input Capacitance(Ciss):
35pF;75pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
800pC@4.5V;1.25nC@4.5V
Mfr. Part #:
SP2026KCTW
Package:
SOT-363
Product Description
Product Overview
The SP2026KCTW is a 20V Complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. This surface mount device offers high power and current handling capabilities, with ESD protection up to 2KV. It is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP2026KCTW
- Package Type: SOT-363
- Technology: Complementary MOSFET
- ESD Protection: 2KV
Technical Specifications
| Parameter | Symbol | Conditions | N-Channel Min. | N-Channel Typ. | N-Channel Max. | N-Channel Unit | P-Channel Min. | P-Channel Typ. | P-Channel Max. | P-Channel Unit | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | -20 | V | ||||||
| Gate-Source Voltage | VGS | 12 | V | 12 | V | ||||||
| Continuous Drain Current | ID | 0.75 | A | -0.66 | A | ||||||
| Pulsed Drain Current | IDM | 3 | A | -2.64 | A | ||||||
| Power Dissipation | PD | 150 | mW | 150 | mW | ||||||
| Storage Temperature Range | TSTG | -55 | 150 | -55 | 150 | ||||||
| Operating Junction Temperature Range | TJ | -55 | 150 | -55 | 150 | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 20 | - | - | V | -20 | - | - | V | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.35 | 0.65 | 1.00 | V | -0.35 | -0.65 | -1.00 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=500mA | - | 250 | 380 | m | - | 650 | 750 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V , ID=200mA | - | 350 | 450 | m | - | 850 | 1000 | m | |
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 35 | - | pF | - | 75 | - | pF | |
| Output Capacitance | Coss | - | 19 | - | pF | - | 20 | - | pF | ||
| Reverse Transfer Capacitance | Crss | - | 9 | - | pF | - | 14 | - | pF | ||
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=500mA | - | 0.8 | - | nC | VDS=-10V , VGS=-4.5V , ID=-0.5A | - | 1.25 | - | nC |
| Gate-Source Charge | Qgs | - | 0.3 | - | nC | - | 0.35 | - | nC | ||
| Gate-Drain Charge | Qgd | - | 0.16 | - | nC | - | 0.27 | - | nC | ||
| Turn-On Delay Time | td(on) | VDD=10V VGS=4.5V , RG=10 , ID=500mA | - | 4 | - | nS | VDD=-10V VGS=-4.5V , RG=3 , RL=2.5 | - | 5 | - | nS |
| Turn-On Rise Time | tr | - | 19 | - | nS | - | 19 | - | nS | ||
| Turn-Off Delay Time | td(off) | - | 10 | - | nS | - | 15 | - | nS | ||
| Turn-Off Fall Time | tf | - | 21 | - | nS | - | 24 | - | nS | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Device Code | Package | Unit/Tape |
|---|---|---|
| SP2026KCTW | SOT-363 | 3000 |
| Symbol | Dimensions In Millimeters | Min. | Max. |
|---|---|---|---|
| A | 0.90 | 1.00 | |
| A1 | 0.00 | 0.10 | |
| B | 0.10 | 0.30 | |
| b1 | 1.30 | ||
| D | 1.80 | 2.20 | |
| E | 2.00 | 2.20 | |
| E1 | 1.15 | 1.35 | |
| e | TYP. | 0.65 | |
| L | 0.10 | 0.25 | |
| L1 | 0.15 | 0.4 |
2504101957_Siliup-SP2026KCTW_C41355148.pdf
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