Low On Resistance 40V Dual N Channel MOSFET Siliup SP40N11DNJ Suitable for Power Management and DC DC Converter Applications

Key Attributes
Model Number: SP40N11DNJ
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
22A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
96pF
Number:
1 N-channel
Output Capacitance(Coss):
109pF
Pd - Power Dissipation:
16W
Input Capacitance(Ciss):
1.013nF
Gate Charge(Qg):
22.9nC@10V
Mfr. Part #:
SP40N11DNJ
Package:
PDFN-8L(3x3)
Product Description

Product Overview

The SP40N11DNJ is a 40V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low On-Resistance, and is 100% tested for single pulse avalanche energy. This MOSFET is designed for applications such as DC-DC Converters and Power Management, and is housed in a PDFN3X3-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP40N11DNJ
  • Device Code: 40N11D
  • Package: PDFN3X3-8L

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS 40V
RDS(on)TYP @10V 11m
ID 22A
RDS(on)TYP @4.5V 14m
Absolute Maximum Ratings
Drain-Source Voltage VDSS 40 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (Tc=25C) ID (Tc=25C) 22 A
Continuous Drain Current (Tc=100C) ID (Tc=100C) 14.7 A
Pulse Drain Current Tested IDM 88 A
Single Pulse Avalanche Energy EAS 20 mJ
Power Dissipation (Tc=25C) PD (Tc=25C) 16 W
Thermal Resistance Junction-to-Case RJC 7.9 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 40 - - V
Drain-Source Leakage Current IDSS VDS=32V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=8A - 11 14 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=4A - 14 20 m
Dynamic Characteristics
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz - 1013 - pF
Output Capacitance Coss - 109 - pF
Reverse Transfer Capacitance Crss - 96 - pF
Total Gate Charge Qg VDS=20V , VGS=10V , ID=8A - 22.9 - nC
Gate-Source Charge Qgs - 3.5 -
Gate-Drain Charge Qg - 5.3 -
Switching Characteristics
Turn-On Delay Time Td(on) VDD=20V VGS=10V , RG=3, ID=8A - 5.5 - nS
Rise Time Tr - 14 -
Turn-Off Delay Time Td(off) - 24 -
Fall Time Tf - 12 -
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 22 A
Reverse recover time Trr IS=10A, di/dt=100A/us, Tj=25 - 12 - nS
Reverse recovery charge Qrr - 5 - nC
Package Information (PDFN3X3-8L)
Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 0.650 0.850 0.026 0.033
A1 0.152 REF. 0.006 REF.
A2 0~0.05 0~0.002
D 2.900 3.100 0.114 0.122
D1 0.935 1.135 0.037 0.045
D2 0.280 0.480 0.011 0.019
E 2.900 3.100 0.114 0.122
E1 3.150 3.450 0.124 0.136
E2 1.535 1.935 0.060 0.076
b 0.200 0.400 0.008 0.016
e 0.550 0.750 0.022 0.030
L 0.300 0.500 0.012 0.020
L1 0.180 0.480 0.007 0.019
L2 0~0.100 0~0.004
L3 0~0.100 0~0.004
H 0.315 0.515 0.012 0.020
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2504101957_Siliup-SP40N11DNJ_C41355070.pdf

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