Low On Resistance 40V Dual N Channel MOSFET Siliup SP40N11DNJ Suitable for Power Management and DC DC Converter Applications
Product Overview
The SP40N11DNJ is a 40V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low On-Resistance, and is 100% tested for single pulse avalanche energy. This MOSFET is designed for applications such as DC-DC Converters and Power Management, and is housed in a PDFN3X3-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40N11DNJ
- Device Code: 40N11D
- Package: PDFN3X3-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Product Summary | ||||||
| V(BR)DSS | 40V | |||||
| RDS(on)TYP | @10V | 11m | ||||
| ID | 22A | |||||
| RDS(on)TYP | @4.5V | 14m | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 40 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | (Tc=25C) | 22 | A | ||
| Continuous Drain Current (Tc=100C) | ID | (Tc=100C) | 14.7 | A | ||
| Pulse Drain Current Tested | IDM | 88 | A | |||
| Single Pulse Avalanche Energy | EAS | 20 | mJ | |||
| Power Dissipation (Tc=25C) | PD | (Tc=25C) | 16 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 7.9 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=8A | - | 11 | 14 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=4A | - | 14 | 20 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 1013 | - | pF |
| Output Capacitance | Coss | - | 109 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 96 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=8A | - | 22.9 | - | nC |
| Gate-Source Charge | Qgs | - | 3.5 | - | ||
| Gate-Drain Charge | Qg | - | 5.3 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20V VGS=10V , RG=3, ID=8A | - | 5.5 | - | nS |
| Rise Time | Tr | - | 14 | - | ||
| Turn-Off Delay Time | Td(off) | - | 24 | - | ||
| Fall Time | Tf | - | 12 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 22 | A | |
| Reverse recover time | Trr | IS=10A, di/dt=100A/us, Tj=25 | - | 12 | - | nS |
| Reverse recovery charge | Qrr | - | 5 | - | nC | |
| Package Information (PDFN3X3-8L) | ||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 0.650 | 0.850 | 0.026 | 0.033 |
| A1 | 0.152 | REF. | 0.006 | REF. |
| A2 | 0~0.05 | 0~0.002 | ||
| D | 2.900 | 3.100 | 0.114 | 0.122 |
| D1 | 0.935 | 1.135 | 0.037 | 0.045 |
| D2 | 0.280 | 0.480 | 0.011 | 0.019 |
| E | 2.900 | 3.100 | 0.114 | 0.122 |
| E1 | 3.150 | 3.450 | 0.124 | 0.136 |
| E2 | 1.535 | 1.935 | 0.060 | 0.076 |
| b | 0.200 | 0.400 | 0.008 | 0.016 |
| e | 0.550 | 0.750 | 0.022 | 0.030 |
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| L1 | 0.180 | 0.480 | 0.007 | 0.019 |
| L2 | 0~0.100 | 0~0.004 | ||
| L3 | 0~0.100 | 0~0.004 | ||
| H | 0.315 | 0.515 | 0.012 | 0.020 |
| 9 | 13 | 9 | 13 | |
2504101957_Siliup-SP40N11DNJ_C41355070.pdf
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