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quality Dual P Channel MOSFET 20V 2KV ESD Protection Siliup SP2004KDTL for Battery Switch and DC DC Converter factory
quality Dual P Channel MOSFET 20V 2KV ESD Protection Siliup SP2004KDTL for Battery Switch and DC DC Converter factory

Dual P Channel MOSFET 20V 2KV ESD Protection Siliup SP2004KDTL for Battery Switch and DC DC Converter

Key Attributes
Model Number: SP2004KDTL
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
700mA
RDS(on):
400mΩ@4.5V;550mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
-
Output Capacitance(Coss):
15pF
Input Capacitance(Ciss):
113pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
1.9nC@4.5V
Mfr. Part #:
SP2004KDTL
Package:
SOT-563
Product Description

Product Overview

The SP2004KDTL is a 20V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount package, with ESD protection up to 2KV. This MOSFET is designed for applications such as battery switches and DC/DC converters.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP2004KDTL
  • Package: SOT-563
  • Circuit Diagram Marking: 04K
  • ESD Protected: 2KV

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -20 V
RDS(on) @-4.5V 400 550 m
ID -0.7 A
RDS(on) @-2.5V 550 m
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS 12 V
Continuous Drain Current ID -0.7 A
Pulse Drain Current IDM Tested -2.8 A
Power Dissipation PD 150 mW
Thermal Resistance Junction-to-Ambient RJA 833 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250A -20 V
Drain-Source Leakage Current IDSS VDS=-16V , VGS=0V -1 uA
Gate-Source Leakage Current IGSS VGS=12V , VDS=0V 10 uA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250A -0.35 -0.65 -1.00 V
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-500mA 400 550 m
Static Drain-Source On-Resistance RDS(ON) VGS=-2.5V , ID=-200mA 550 700 m
Input Capacitance Ciss VDS=-16V , VGS=0V , f=1MHz 113 pF
Output Capacitance Coss 15 pF
Reverse Transfer Capacitance Crss 9 pF
Total Gate Charge Qg VDS=-10V , VGS=-4.5V , ID=-300mA 1.9 nC
Gate-Source Charge Qgs 0.4
Gate-Drain Charge Qg 0.31
Turn-On Delay Time td(on) VDD=-10V VGS=-4.5V , RG=10 , ID=-200mA 9 nS
Turn-On Rise Time tr 5.7
Turn-Off Delay Time td(off) 32.6
Turn-Off Fall Time tf 20.3
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 -1.2 V
SOT-563 Package Information
Symbol Dimensions In Millimeters Min Max
A 0.525 0.600
A1 0.000 0.050
e 0.450 0.550
c 0.090 0.160
D 1.500 1.700
b 0.170 0.270
E1 1.100 1.300
E 1.500 1.700
L 0.100 0.300
L1 0.200 0.400
7Ref.

2504101957_Siliup-SP2004KDTL_C41355131.pdf

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