High voltage MOSFET Slkor SL12N100 with 100 percent avalanche tested reliability and RoHS compliance
Key Attributes
Model Number:
SL12N100
Product Custom Attributes
Drain To Source Voltage:
1kV
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.2Ω@10V,6A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
17pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.83nF@25V
Pd - Power Dissipation:
272W
Gate Charge(Qg):
43nC@10V
Mfr. Part #:
SL12N100
Package:
TO-220
Product Description
Product Overview
This product is a high-performance MOSFET designed for efficient power switching applications. It features low gate charge, low Crss, fast switching speeds, and 100% avalanche tested for reliability. Its improved dv/dt capability and RoHS compliance make it suitable for demanding power supply designs.
Product Attributes
- Brand: SL Kormicro
- Certifications: RoHS
Technical Specifications
| Model | Parameter | Symbol | Test Conditions | Min | Type | Max | Unit | |
| SL12N100 / T / F | Drain-Source Voltage | VDSS | 1000 | V | ||||
| Drain Current-continuous (Tc=25) | ID | 12 | A | |||||
| Drain Current-continuous (Tc=100) | ID | 8 | A | |||||
| Gate-Source Voltage | VGS | 30 | V | |||||
| Single pulse avalanche energy | EAS | L=20mH, IAS=12A, VDD=50V, RG=25 ,Starting TJ=25 | 858 | mJ | ||||
| Avalanche Current | IAR | (note 1) | 12 | A | ||||
| Repetitive Avalanche Energy | EAR | (note 1) | 27.7 | mJ | ||||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | +150 | |||||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | ||||||
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A,referenced to 25 | - | 0.98 | - | V/ | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=800V,VGS=0V TC=25 | - | - | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=720V,TC =125 | - | - | 10 | A | ||
| SL12N100 / T | Power Dissipation (TC=25) | PD | 272 | W | ||||
| Derate above 25 | 2.17 | W/ | ||||||
| Thermal Resistance,junction to Case | Rth(j-C) | 0.46 | /W | |||||
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 40 | /W | |||||
| Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=6A TC=25 | - | 1.0 | 1.2 | |||
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHZ | - | 2150 | 2830 | pF | ||
| Output capacitance | Coss | - | 189 | 246 | pF | |||
| SL12N100 | Power Dissipation (TC=25) | PD | 100 | W | ||||
| Derate above 25 | 0.8 | W/ | ||||||
| Thermal Resistance,junction to Case | Rth(j-C) | 1.25 | /W | |||||
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | /W | |||||
| Reverse transfer capacitance | Crss | - | 13 | 17 | pF | |||
| Turn-On delay time | td(on) | VDD=600V,ID=12A, RGEN=25 (note 4,5) | - | 53 | 121 | ns | ||
| Turn-On rise time | tr | - | 116 | 235 | ns | |||
| SL12N100 F | Power Dissipation (TC=25) | PD | 68 | W | ||||
| Derate above 25 | 0.54 | W/ | ||||||
| Thermal Resistance,junction to Case | Rth(j-C) | 1.84 | /W | |||||
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | /W | |||||
| Turn-Off delay time | td(Off) | - | 97 | 199 | ns | |||
| Turn-Off rise time | tf | - | 69 | 171 | ns | |||
| Total Gate Charge | Qg | VDS=800V,ID=12A, VGS=10V (note 4,5) | - | 43 | 56 | nC | ||
| Diode Characteristics | Diode Forward Voltage | VSD | VGS=0V,IS=12A | - | - | 1.4 | V | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 48 | A | |||
| Maximum Continuous Drain Source Diode Forward Current | IS | - | - | 12 | A | |||
| Switching Characteristics | Reverse recovery time | trr | VGS=0V, IS=8A dIF/dt=100A/s (note 4) | - | 539 | - | ns | |
| Reverse recovery charge | Qrr | - | 6.41 | - | C | |||
| Gate-Source charge | Qgs | - | 15 | - | nC | |||
| Gate-Drain charge | Qg d | - | 21 | - | nC |
Applications
- High frequency switching mode power supply
- Electronic ballast based on half bridge
- LED power supplies
2409302301_Slkor-SL12N100_C6800595.pdf
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