Fast switching low gate charge mosfet Siliup SP30N15P8 30 volt n channel for high frequency circuits
Key Attributes
Model Number:
SP30N15P8
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
7A
RDS(on):
15mΩ@10V;20mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
59pF
Number:
1 N-channel
Output Capacitance(Coss):
77pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
583pF
Gate Charge(Qg):
6nC@4.5V
Mfr. Part #:
SP30N15P8
Package:
SOP-8L
Product Description
Product Overview
The SP30N15P8 is a 30V N-Channel MOSFET designed by Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard-switched and high-frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 30N15
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 30 | V | ||||
| RDS(on)TYP | @10V | 15 | m | |||
| RDS(on)TYP | @4.5V | 20 | m | |||
| ID | 7 | A | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 7 | A | |||
| Pulsed Drain Current | IDM | 28 | A | |||
| Power Dissipation | PD | 1.5 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 85 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=5A | - | 15 | 20 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=4A | - | 20 | 26 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 583 | - | pF |
| Output Capacitance | Coss | - | 77 | - | ||
| Reverse Transfer Capacitance | Crss | - | 59 | - | ||
| Total Gate Charge | Qg | VDS=15V , VGS=4.5V , ID=7A | - | 6 | - | nC |
| Gate-Source Charge | Qgs | - | 2.2 | - | ||
| Gate-Drain Charge | Qgd | - | 2 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=15V ,VGS=10V , RG=3, ID=7A | - | 1.2 | - | nS |
| Rise Time | tr | - | 40 | - | ||
| Turn-Off Delay Time | td(off) | - | 18 | - | ||
| Fall Time | tf | - | 7.2 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 7 | A | |
| Reverse Recovery Time | trr | IS=5A, di/dt=100A/us, TJ=25 | - | 8 | - | nS |
| Reverse Recovery Charge | Qrr | - | 2 | - | nC | |
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 REF. | |||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP30N15P8_C41354878.pdf
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