Surface Mount MOSFET Siliup 2N7002K 60V N Channel with High Current Handling and 2KV ESD Protection
Key Attributes
Model Number:
2N7002K
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.7Ω@10V;1.8Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
10pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
28pF
Gate Charge(Qg):
1.7nC@4.5V
Mfr. Part #:
2N7002K
Package:
SOT-23
Product Description
Product Overview
The 2N7002K is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mounting, it offers high power and current handling capabilities with ESD protection up to 2KV. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 72K
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @10V | 1.7 | |||
| Static Drain-Source On-Resistance | RDS(on) | @4.5V | 1.8 | |||
| Continuous Drain Current | ID | 300 | mA | |||
| Features | ||||||
| High power and current handing capability | ||||||
| Surface mount package | ||||||
| ESD protected 2KV | ||||||
| Applications | ||||||
| Battery Switch | ||||||
| DC/DC Converter | ||||||
| Package Information | ||||||
| Package | SOT-23 | |||||
| Order Information | Device | Package | Unit/Tape | |||
| 2N7002K | SOT-23 | 3000 | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 300 | mA | |||
| Pulse Drain Current | IDM | Tested | 1200 | mA | ||
| Power Dissipation | PD | 350 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 357 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =200mA | - | 1.7 | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =200mA | - | 1.8 | 4 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 28 | - | pF |
| Output Capacitance | Coss | - | 10 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 5 | - | pF | |
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=300mA | - | 1.7 | - | nC |
| Gate-Source Charge | Qgs | - | 0.35 | - | ||
| Gate-Drain Charge | Qgd | - | 0.5 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V VGS=10V , RG=25 , ID=300mA | - | 3 | - | nS |
| Turn-On Rise Time | tr | - | 17 | - | ||
| Turn-Off Delay Time | td(off) | - | 10 | - | ||
| Turn-Off Fall Time | tf | - | 21 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| SOT-23 Package Information | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| E1 | 2.25 | 2.55 | ||||
| e | 0.95 REF. | |||||
| e1 | 1.80 | 2.00 | ||||
| L | 0.55 REF. | |||||
| L1 | 0.30 | 0.50 | ||||
| 0o | 8o | |||||
2504101957_Siliup-2N7002K_C41355117.pdf
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