60V P Channel MOSFET Siliup SP60P30TH featuring fast switching and low gate charge for load switching
Key Attributes
Model Number:
SP60P30TH
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@10V;38mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
116pF
Number:
1 P-Channel
Output Capacitance(Coss):
154pF
Pd - Power Dissipation:
55W
Input Capacitance(Ciss):
2.18nF
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
SP60P30TH
Package:
TO-252-2L
Product Description
Product Overview
The SP60P30TH is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on). This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters and load switching.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 60P30
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | -60 | V | ||||
| RDS(on)TYP | @-10V | 30 | m | |||
| ID | -30 | A | ||||
| RDS(on)TYP | @-4.5V | 38 | m | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | -60 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (TC=25) | -30 | A | ||
| Continuous Drain Current | ID | (TC=100) | -20 | A | ||
| Pulsed Drain Current | IDM | -120 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 196 | mJ | |||
| Power Dissipation | PD | (TC=25) | 55 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 2.27 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -60 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-48V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-5A | 30 | 40 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-4A | 38 | 50 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-30V , VGS=0V , f=1MHz | 2180 | pF | ||
| Output Capacitance | Coss | 154 | pF | |||
| Reverse Transfer Capacitance | Crss | 116 | pF | |||
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-6A | 52 | nC | ||
| Gate-Source Charge | Qgs | 8 | ||||
| Gate-Drain Charge | Qgd | 10 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-30V,VGS=-10V,RG=3, ID=-6A | 12 | nS | ||
| Rise Time | Tr | 6 | ||||
| Turn-Off Delay Time | Td(off) | 53 | ||||
| Fall Time | Tf | 13 | ||||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -30 | A | |||
| Reverse Recovery Time | Trr | IS=-20A, di/dt=100A/us, TJ=25 | 27 | nS | ||
| Reverse Recovery Charge | Qrr | 58 | nC | |||
| Package Information (TO-252) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 2.200 - 2.400 | 0.087 - 0.094 | ||||
| A1 | 0.000 - 0.127 | 0.000 - 0.005 | ||||
| b | 0.660 - 0.860 | 0.026 - 0.034 | ||||
| c | 0.460 - 0.580 | 0.018 - 0.023 | ||||
| D | 6.500 - 6.700 | 0.256 - 0.264 | ||||
| D1 | 5.100 - 5.460 | 0.201 - 0.215 | ||||
| D2 | 4.830 REF. | 0.190 REF. | ||||
| E | 6.000 - 6.200 | 0.236 - 0.244 | ||||
| e | 2.186 - 2.386 | 0.086 - 0.094 | ||||
| L | 9.800 - 10.400 | 0.386 - 0.409 | ||||
| L1 | 2.900 REF. | 0.114 REF. | ||||
| L2 | 1.400 - 1.700 | 0.055 - 0.067 | ||||
| L3 | 1.600 REF. | 0.063 REF. | ||||
| L4 | 0.600 - 1.000 | 0.024 - 0.039 | ||||
| 1.100 - 1.300 | 0.043 - 0.051 | |||||
| 0 - 8 | 0 - 8 | |||||
| h | 0.000 - 0.300 | 0.000 - 0.012 | ||||
| V | 5.350 REF. | 0.211 REF. | ||||
2504101957_Siliup-SP60P30TH_C41355217.pdf
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