Power Switching MOSFET Siliup SP30P03TQ 30V P Channel with Low Rdson and Fast Switching Performance

Key Attributes
Model Number: SP30P03TQ
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.4mΩ@10V;4.8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
650pF
Number:
1 P-Channel
Output Capacitance(Coss):
859pF
Pd - Power Dissipation:
85W
Input Capacitance(Ciss):
5.7nF
Gate Charge(Qg):
120nC@10V
Mfr. Part #:
SP30P03TQ
Package:
TO-220-3L
Product Description

Product Overview

The SP30P03TQ is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, with typical RDS(on) values of 3.4m at 10V and 4.8m at 4.5V. This MOSFET is designed for power switching applications, DC-DC converters, and power management systems. It is 100% tested for single pulse avalanche energy.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP30P03TQ
  • Package: TO-220-3L
  • Circuit Diagram Marking: 30P03

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
V(BR)DSS V(BR)DSS -30 V
RDS(on)TYP RDS(on) @10V 3.4 m
RDS(on)TYP RDS(on) @4.5V 4.8 m
ID ID -120 A
Absolute Maximum Ratings
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID (Tc=25) -120 A
Continuous Drain Current (Tc=100) ID (Tc=100) -80 A
Pulsed Drain Current IDM -480 A
Single Pulse Avalanche Energy EAS 756 mJ
Power Dissipation (Tc=25) PD (Tc=25) 85 W
Thermal Resistance Junction-to-Case RJC 1.5 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -30 - - V
Drain Cut-Off Current IDSS VDS=-24V , VGS=0V , TJ=25 - - -1 A
Gate Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.0 -1.6 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID=-30A - 3.4 4.3 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-20A - 4.8 6.4 m
Dynamic Characteristics
Input Capacitance Ciss VDS=-15V , VGS=0V , f=1MHz - 5700 - pF
Output Capacitance Coss - 859 -
Reverse Transfer Capacitance Crss - 650 -
Total Gate Charge Qg VDS=-15V , VGS=-10V , ID=-20A - 120 - nC
Gate-Source Charge Qgs - 23 -
Gate-Drain Charge Qgd - 17 -
Switching Characteristics
Turn-On Delay Time td(on) VDD=-15VVGS=-10V,RG=3,ID=-20A - 27 - nS
Rise Time tr - 83 -
Turn-Off Delay Time td(off) - 76 -
Fall Time tf - 65 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = -1A, VGS = 0V - - -1.2 V
Maximum Body-Diode Continuous Current IS - - -120 A
Reverse Recovery Time Trr IS=-20A, di/dt=100A/us, Tj=25 - 30 - nS
Reverse Recovery Charge Qrr - 18 - nC

Package Information

TO-220-3L Package Information

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 4.400 4.600 0.173 0.181
A1 2.250 2.550 0.089 0.100
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.330 0.650 0.013 0.026
c1 1.200 1.400 0.047 0.055
D 9.910 10.250 0.390 0.404
E 8.950 9.750 0.352 0.384
E1 12.650 13.050 0.498 0.514
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
F 2.650 2.950 0.104 0.116
H 7.900 8.100 0.311 0.319
h 0.000 0.300 0.000 0.012
L 12.900 13.400 0.508 0.528
L1 2.850 3.250 0.112 0.128
V 6.900 REF. 0.276 REF.
3.400 3.800 0.134 0.150

2504101957_Siliup-SP30P03TQ_C41355009.pdf

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