Low RDSon N Channel MOSFET Slkor SL05N10A Designed for Synchronous Rectification and Inverter Applications
Key Attributes
Model Number:
SL05N10A
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
180mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.4pF
Number:
1 N-channel
Output Capacitance(Coss):
29pF
Input Capacitance(Ciss):
206pF
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
4.3nC@10V
Mfr. Part #:
SL05N10A
Package:
SOT-23
Product Description
Product Overview
The SL05N10A is an N-Channel Enhancement Mode Field Effect Transistor designed for low RDS(on) and FOM, offering extremely low switching loss, excellent stability and uniformity, and fast switching with soft recovery. It is suitable for various power applications including consumer electronic power supplies, motor control, synchronous rectification, isolated DC/DC converters, and inverters.
Product Attributes
- Brand: SLKormicro
- Model: SL05N10A
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS= 20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 1.0 | 1.8 | 3.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 10V, ID=3.0A | 110 | 180 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=2.0A | 160 | 300 | m | |
| Diode Forward Voltage | VSD | IS=5.0A,VGS=0V | 0.8 | 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | 5.0 | A | |||
| Input Capacitance | Ciss | VDS=100V,VGS=0V,f=1MHZ | 206 | pF | ||
| Output Capacitance | Coss | VDS=100V,VGS=0V,f=1MHZ | 29 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=100V,VGS=0V,f=1MHZ | 14.7 | pF | ||
| Total Gate Charge | Qg | VGS=10V,VDD=30V, ID=2A,RL=1 RGEN=3 | 32 | nC | ||
| Gate Source Charge | Qgs | VGS=10V,VDD=30V, ID=2A,RL=1 RGEN=3 | 3.5 | nC | ||
| Gate Drain Charge | Qg | VGS=10V,VDD=30V, ID=2A,RL=1 RGEN=3 | 2.7 | nC | ||
| Reverse Recovery Charge | Qrr | IF=2A, di/dt=500A/us | 1.5 | C | ||
| Reverse Recovery Time | trr | IF=2A, di/dt=500A/us | 4.3 | ns | ||
| Turn-on Delay Time | tD(on) | VGS=10V,VDD=30V, ID=2A,RL=1 RGEN=3 | 1.1 | ns | ||
| Turn-on Rise Time | tr | VGS=10V,VDD=30V, ID=2A,RL=1 RGEN=3 | 14.7 | ns | ||
| Turn-off Delay Time | tD(off) | VGS=10V,VDD=30V, ID=2A,RL=1 RGEN=3 | 20.9 | ns | ||
| Turn-off Fall Time | tf | VGS=10V,VDD=30V, ID=2A,RL=1 RGEN=3 | 33 | ns | ||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current @ Steady State (TA=25) | ID | 5.0 | A | |||
| Drain Current @ Steady State (TA=70) | ID | 4.0 | A | |||
| Pulsed Drain Current | IDM | 21 | A | |||
| Total Power Dissipation @ TA=25 | PD | 1.2 | W | |||
| Thermal Resistance Junction-to-Ambient @ Steady State | RJA | 104 | / W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 |
2201201830_Slkor-SL05N10A_C2965528.pdf
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