P Channel Enhancement Mode MOSFET Slkor BSS84 engineered for switching and amplification functions
Key Attributes
Model Number:
BSS84
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
10Ω@5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Output Capacitance(Coss):
10pF
Input Capacitance(Ciss):
73pF
Pd - Power Dissipation:
200mW
Gate Charge(Qg):
-
Mfr. Part #:
BSS84
Package:
SOT-23
Product Description
Product Overview
The BSS84 is a P-Channel Enhancement-Mode MOSFET designed for various electronic applications. It offers reliable performance with key electrical characteristics suitable for switching and amplification circuits.
Product Attributes
- Brand: slkormicro.com
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Notes |
| P-Channel Enhancement-Mode MOS FETs | ||||||
| Drain-Source Breakdown Voltage | BVDSS | -50 | V | (ID =-250uA,VGS=0V) | ||
| Gate Threshold Voltage | VGS(th) | -1.0 | -2.5 | V | (ID =-250uA,VGS= VDS) | |
| Diode Forward Voltage Drop | VSD | -1.5 | V | (ISD=-200mA,VGS=0V) | ||
| Zero Gate Voltage Drain Current | IDSS | -15 | uA | (VGS=0V, VDS= -50V) | ||
| Zero Gate Voltage Drain Current | IDSS | -60 | uA | (VGS=0V, VDS=-50V, TA=125) | ||
| Gate Body Leakage | IGSS | +10 | nA | (VGS=+20V, VDS=0V) | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 10 | (ID=-100mA,VGS=-5V) | |||
| Input Capacitance | CISS | 73 | pF | (VGS=0V, VDS=-25V,f=1MHz) | ||
| Common Source Output Capacitance | COSS | 10 | pF | (VGS=0V, VDS=-25V,f=1MHz) | ||
| Turn-ON Time | t(on) | 5 | ns | (VDS=-30V, ID=-270mA, RGEN=6) | ||
| Turn-OFF Time | t(off) | 20 | ns | (VDS=-30V, ID=-270mA, RGEN=6) | ||
| Reverse Recovery Time | trr | 10 | ns | (ISD=-100mA, VGS=0V) | ||
| Maximum Ratings: Drain-Source Voltage | BVDSS | -50 | V | |||
| Maximum Ratings: Gate-Source Voltage | VGS | +20 | V | |||
| Maximum Ratings: Drain Current (continuous) | IDR | -130 | mA | |||
| Maximum Ratings: Drain Current (pulsed) | IDRM | -520 | mA | |||
| Maximum Ratings: Total Device Dissipation | PD | 200 | mW | TA=25 | ||
| Maximum Ratings: Total Device Dissipation Derate | 1.8 | mW/ | above25 | |||
| Thermal Characteristics: Thermal Resistance Junction to Ambient | RJA | 350 | /W | |||
| Thermal Characteristics: Junction and Storage Temperature | TJ,Tstg | -55 | +150 |
Package Information (SOT-23)
| Symbol | MIN. | MAX. | Dimensions in Millimeters |
| A | 0.900 | 1.150 | |
| A1 | 0.000 | 0.100 | |
| A2 | 0.900 | 1.050 | |
| b | 0.300 | 0.500 | |
| c | 0.080 | 0.150 | |
| D | 2.800 | 3.000 | |
| E | 1.200 | 1.400 | |
| E1 | 2.250 | 2.550 | |
| e | 0.950TYP | ||
| e1 | 1.800 | 2.000 | |
| L | 0.550REF | ||
| L1 | 0.300 | 0.500 | |
| 0 | 8 |
2409302203_Slkor-BSS84_C2681367.pdf
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