20V 50A N Channel MOSFET Siliup SP20N06TH Low Gate Charge and Low Rdson for High Frequency Switching

Key Attributes
Model Number: SP20N06TH
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.3mΩ@4.5V;8mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
625pF
Number:
1 N-channel
Pd - Power Dissipation:
32W
Input Capacitance(Ciss):
6.4nF
Gate Charge(Qg):
17nC@4.5V
Mfr. Part #:
SP20N06TH
Package:
TO-252
Product Description

Product Overview

The SP20N06TH is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, making it ideal for high-frequency switching and synchronous rectification applications. This MOSFET is designed for DC-DC converters and is 100% tested for single pulse avalanche energy.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: 20N06
  • Package: TO-252
  • Material: Silicon
  • Type: N-Channel MOSFET

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 20 V
Static Drain-Source On-Resistance RDS(on) @4.5V 6.3 m
Static Drain-Source On-Resistance RDS(on) @2.5V 8 m
Continuous Drain Current ID 50 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25) 20 V
Gate-Source Voltage VGS (Ta=25) 12 V
Continuous Drain Current ID (TC=25) 50 A
Continuous Drain Current ID (TC=100) 33 A
Pulsed Drain Current IDM 200 A
Single Pulse Avalanche Energy EAS 90 mJ
Power Dissipation PD (TC=25) 32 W
Thermal Resistance Junction-to-Case RJC 3.9 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 20 - - V
Drain-Source Leakage Current IDSS VDS=16V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=12V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 0.5 0.7 1.2 V
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=20A - 6.3 8 m
Static Drain-Source On-Resistance RDS(ON) VGS=2.5V , ID=15A - 8 13 m
Input Capacitance Ciss VDS=10V , VGS=0V , f=1MHz - 1615 - pF
Output Capacitance Coss VDS=10V , VGS=0V , f=1MHz - 225 - pF
Reverse Transfer Capacitance Crss VDS=10V , VGS=0V , f=1MHz - 196 - pF
Total Gate Charge Qg VDS=10V,VGS=4.5V,ID=20A - 17 - nC
Gate-Source Charge Qgs VDS=10V,VGS=4.5V,ID=20A - 3.6 - nC
Gate-Drain Charge Qg VDS=10V,VGS=4.5V,ID=20A - 5.5 - nC
Turn-On Delay Time Td(on) VGS=4.5V,VDD=10V,ID=20A,RG=3 - 8 - nS
Rise Time Tr VGS=4.5V,VDD=10V,ID=20A,RG=3 - 20 - nS
Turn-Off Delay Time Td(off) VGS=4.5V,VDD=10V,ID=20A,RG=3 - 37 - nS
Fall Time Tf VGS=4.5V,VDD=10V,ID=20A,RG=3 - 23 - nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 50 A
Reverse Recovery Time Trr IS=20A, di/dt=100A/us, TJ=25 - 8.5 - nS
Reverse Recovery Charge Qrr IS=20A, di/dt=100A/us, TJ=25 - 1.6 - nC
Package Information (TO-252)
Dimension Symbol Min. (mm) Max. (mm) Min. (in) Max. (in)
A A 2.200 2.400 0.087 0.094
A1 A1 0.000 0.127 0.000 0.005
b b 0.660 0.860 0.026 0.034
c c 0.460 0.580 0.018 0.023
D D 6.500 6.700 0.256 0.264
D1 D1 5.100 5.460 0.201 0.215
D2 D2 4.830 (REF) 4.830 (REF) 0.190 (REF) 0.190 (REF)
E E 6.000 6.200 0.236 0.244
e e 2.186 2.386 0.086 0.094
L L 9.800 10.400 0.386 0.409
L1 L1 2.900 (REF) 2.900 (REF) 0.114 (REF) 0.114 (REF)
L2 L2 1.400 1.700 0.055 0.067
L3 L3 1.600 (REF) 1.600 (REF) 0.063 (REF) 0.063 (REF)
L4 L4 0.600 1.000 0.024 0.039
1.100 1.300 0.043 0.051
0 8 0 8
h h 0.000 0.300 0.000 0.012
V V 5.350 (REF) 5.350 (REF) 0.211 (REF) 0.211 (REF)

2504101957_Siliup-SP20N06TH_C41354842.pdf

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