20V Dual N Channel MOSFET Siliup SP2302DTS Suitable for Battery Switch and Surface Mount Applications
Key Attributes
Model Number:
SP2302DTS
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
28mΩ@4.5V;33mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
2 N-Channel
Output Capacitance(Coss):
120pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
300pF
Gate Charge(Qg):
4nC@4.5V
Mfr. Part #:
SP2302DTS
Package:
SOT-23-6L
Product Description
Product Overview
The SP2302DTS is a 20V Dual N-Channel MOSFET designed for high power and current handling capabilities. It is suitable for surface mount applications and is ideal for use as a battery switch and in DC/DC converters. The device offers a low on-resistance at various gate-source voltages, ensuring efficient power transfer.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 2302D
- Package: SOT-23-6L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 20 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @4.5V | 28 | m | ||
| @2.5V | 33 | m | ||||
| Continuous Drain Current | ID | 4 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | 4 | A | |||
| Pulse Drain Current | IDM | Tested | 16 | A | ||
| Power Dissipation | PD | 1 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 125 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.4 | 0.7 | 1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID =3A | - | 28 | 45 | m |
| VGS=2.5V , ID =2A | - | 33 | 60 | m | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 300 | - | pF |
| Output Capacitance | Coss | - | 120 | - | ||
| Reverse Transfer Capacitance | Crss | - | 80 | - | ||
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=3.6A | - | 4.0 | - | nC |
| Gate-Source Charge | Qgs | - | 0.65 | - | ||
| Gate-Drain Charge | Qg d | - | 1.5 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=10V VGS=4.5V , RG=6, ID=3.6A | - | 7 | - | nS |
| Turn-On Rise Time | tr | - | 55 | - | ||
| Turn-Off Delay Time | td(off) | - | 16 | - | ||
| Turn-Off Fall Time | tf | - | 10 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| SOT-23 Package Information | ||
|---|---|---|
| Symbol | Dimensions In Millimeters | |
| A | 0.90 | 1.15 |
| A1 | 0.00 | 0.10 |
| A2 | 0.90 | 1.05 |
| b | 0.30 | 0.50 |
| c | 0.08 | 0.15 |
| D | 2.80 | 3.00 |
| E | 1.20 | 1.40 |
| E1 | 2.25 | 2.55 |
| e | 0.95 REF. | |
| e1 | 1.80 | 2.00 |
| L | 0.55 REF. | |
| L1 | 0.30 | 0.50 |
| 0 | 8 | |
2504101957_Siliup-SP2302DTS_C41354824.pdf
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