P Channel MOSFET Siliup SP2319T2 Featuring 40V Drain Source Voltage and Surface Mount SOT 23 Package
Key Attributes
Model Number:
SP2319T2
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
3.2A
RDS(on):
65mΩ@10V;85mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
1 P-Channel
Output Capacitance(Coss):
52pF
Input Capacitance(Ciss):
520pF
Pd - Power Dissipation:
900mW
Gate Charge(Qg):
9nC@10V
Mfr. Part #:
SP2319T2
Package:
SOT-23
Product Description
Product Overview
The SP2319T2 is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers a typical RDS(on) of 65m at -10V and -3A, and 85m at -4.5V and -2A, with a continuous drain current (ID) of -3.2A.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: P-Channel MOSFET
- Package: SOT-23
- Device Code: 2319
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -40 | V | |||
| Static Drain-Source On-Resistance | RDS(on)TYP | @-10V | 65 | m | ||
| Continuous Drain Current | ID | -3.2 | A | |||
| Static Drain-Source On-Resistance | RDS(on)TYP | @-4.5V | 85 | m | ||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -40 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | -3.2 | A | |||
| Pulse Drain Current | IDM | Tested | -12.8 | A | ||
| Power Dissipation | PD | 0.9 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 138.8 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BV DSS | VGS=0V , ID=-250A | -40 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-32V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID =-3A | 65 | 85 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID =-2A | 85 | 100 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | 520 | pF | ||
| Output Capacitance | Coss | 52 | pF | |||
| Reverse Transfer Capacitance | Crss | 41 | pF | |||
| Total Gate Charge | Qg | VDS=-20V , VGS=-10V , ID=-3A | 9 | nC | ||
| Gate-Source Charge | Qgs | 1 | - | |||
| Gate-Drain Charge | Qgd | 2.5 | - | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-20V VGS=-10V , RG=3.3 , ID=-3A | 4.2 | nS | ||
| Turn-On Rise Time | tr | 6 | - | |||
| Turn-Off Delay Time | td(off) | 26.8 | - | |||
| Turn-Off Fall Time | tf | 20.6 | - | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Package Information | ||||||
| Package Type | SOT-23 | |||||
| Order Information | Device | Package | Unit/Tape | |||
| SP2319T2 | SOT-23 | 3000 | ||||
| SOT-23 Package Dimensions (Millimeters) | ||||||
| Symbol | Dimensions | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E1 | 1.20 | 1.40 | ||||
| E | 2.25 | 2.55 | ||||
| e | 0.95 REF. | |||||
| e1 | 1.80 | 2.00 | ||||
| L | 0.55 REF. | |||||
| L1 | 0.30 | 0.50 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP2319T2_C41354816.pdf
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