P Channel MOSFET 30V SOT 23 Package Siliup SP3407T2 Optimized for Battery Switch and DC DC Converter
Key Attributes
Model Number:
SP3407T2
Product Custom Attributes
Pd - Power Dissipation:
1.3W
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@10V;65mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
57pF
Number:
-
Output Capacitance(Coss):
72pF
Input Capacitance(Ciss):
501pF
Gate Charge(Qg):
9nC@10V
Mfr. Part #:
SP3407T2
Package:
SOT-23
Product Description
Product Overview
The SP3407T2 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers robust performance with key electrical characteristics optimized for efficient operation.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: P-Channel MOSFET
- Package: SOT-23
- Device Code: 3407
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |||
| RDS(on) Typ. | RDS(on) | @ -10V | 45 | m | ||
| RDS(on) Typ. | RDS(on) | @ -4.5V | 65 | m | ||
| Continuous Drain Current | ID | -4.1 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | -4.1 | A | |||
| Pulse Drain Current | IDM | Tested | -16.4 | A | ||
| Power Dissipation | PD | 1.3 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 96 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -30 | - | V | |
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -1 | -1.6 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID =-4.1A | - | 45 | 56 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID =-3A | - | 65 | 87 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 501 | - | pF |
| Output Capacitance | Coss | - | 72 | - | ||
| Reverse Transfer Capacitance | Crss | - | 57 | - | ||
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-5A | - | 9 | - | nC |
| Gate-Source Charge | Qgs | - | 1.5 | - | ||
| Gate-Drain Charge | Qg d | - | 2.3 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-15V VGS=-10V , RG=3 , ID=-1A | - | 8.6 | - | nS |
| Turn-On Rise Time | tr | - | 5.0 | - | ||
| Turn-Off Delay Time | td(off) | - | 28.2 | - | ||
| Turn-Off Fall Time | tf | - | 13.5 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Package Information: SOT-23 | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| E1 | 2.25 | 2.55 | ||||
| e | REF. | 0.95 | ||||
| e1 | 1.80 | 2.00 | ||||
| L | REF. | 0.55 | ||||
| L1 | 0.30 | 0.50 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP3407T2_C41354969.pdf
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