High Voltage Power MOSFET Slkor SL8N65F N Channel with Low On Resistance and High Current Capability
Key Attributes
Model Number:
SL8N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
8A
RDS(on):
1.1Ω@10V,3.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
4pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
981pF@25V
Pd - Power Dissipation:
100W
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
SL8N65F
Package:
TO-220F
Product Description
Product Overview
The SL8N65 is a N-Channel Enhancement Mode Power MOSFET designed for fast switching, low ON resistance, and low gate charge. It is 100% tested for single pulse avalanche energy and is suitable for power switch circuits in adaptors and chargers.
Product Attributes
- Brand: SLKOR Micro
- Certifications: EU RoHS 2011/65/EU compliant
- Material: Molded plastic (UL Flammability Classification Rating 94V-0)
- Solder Bath Temperature: 275 maximum, 10s per JESD 22-B106
Technical Specifications
| Characteristics | Symbol | Value | Unit | TO-220AB/263 | TO-220F | TO-251/252 |
| Drain-Source Voltage | VDS | 650 | V | ✔ | ✔ | ✔ |
| Gate-Source Voltage | VGS | ±30 | V | ✔ | ✔ | ✔ |
| Continue Drain Current | ID | 8 | A | ✔ | ✔ | ✔ |
| Pulsed Drain Current (Note1) | IDM | 28 | A | ✔ | ✔ | ✔ |
| Power Dissipation | PD | 100 / 30 | W | ✔ | ✔ | ✔ |
| Single Pulse Avalanche Energy (Note1) | EAS | 350 | mJ | ✔ | ✔ | ✔ |
| Operating Temperature Range | TJ | 150 | °C | ✔ | ✔ | ✔ |
| Storage Temperature Range | TSTG | -55 to +150 | °C | ✔ | ✔ | ✔ |
| Thermal Resistance, Junction to Case | RJC | 1.25 / 3.57 | °C/W | ✔ | ✔ | ✔ |
| Thermal Resistance, Junction to Ambient | RJA | 62.5 / 100 | °C/W | ✔ | ✔ | ✔ |
| Drain-Source Breakdown Voltage | BVDSS | 655 | V | ✔ | ✔ | ✔ |
| Drain-Source Leakage Current | IDSS | 1 | µA | ✔ | ✔ | ✔ |
| Gate Leakage Current | IGSS | ±100 | nA | ✔ | ✔ | ✔ |
| Gate-Source Threshold Voltage | VGS(th) | 2 - 4 | V | ✔ | ✔ | ✔ |
| Drain-Source On-State Resistance | RDS(on) | 1.1 - 1.25 | Ω | ✔ | ✔ | ✔ |
| Forward Transconductance | gfs | 6.5 | S | ✔ | ✔ | ✔ |
| Input Capacitance | Ciss | 981 | pF | ✔ | ✔ | ✔ |
| Output Capacitance | Coss | 85 | pF | ✔ | ✔ | ✔ |
| Reverse Transfer Capacitance | Crss | 4 | pF | ✔ | ✔ | ✔ |
| Turn-on Delay Time (Note2) | td(ON) | 18 | ns | ✔ | ✔ | ✔ |
| Rise Time (Note2) | tr | 19 | ns | ✔ | ✔ | ✔ |
| Turn-Off Delay Time (Note2) | td(OFF) | 39 | ns | ✔ | ✔ | ✔ |
| Fall Time (Note2) | tf | 18 | ns | ✔ | ✔ | ✔ |
| Total Gate Charge (Note2) | QG | 18 | nC | ✔ | ✔ | ✔ |
| Gate to Source Charge (Note2) | QGS | 4.3 | nC | ✔ | ✔ | ✔ |
| Gate to Drain Charge (Note2) | QGD | 7.6 | nC | ✔ | ✔ | ✔ |
| Maximun Body-Diode Continuous Current | IS | 8 | A | ✔ | ✔ | ✔ |
| Maximun Body-Diode Pulsed Current (Note2) | ISM | 28 | A | ✔ | ✔ | ✔ |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | ✔ | ✔ | ✔ |
| Reverse Recovery Time (Note2) | trr | 370 | ns | ✔ | ✔ | ✔ |
| Reverse Recovery Charge (Note2) | Qrr | 1.9 | µC | ✔ | ✔ | ✔ |
2401051154_Slkor-SL8N65F_C5632279.pdf
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