power switching P channel MOSFET Siliup SP30P25T1 with low RDS on resistance and high current rating
Key Attributes
Model Number:
SP30P25T1
Product Custom Attributes
Pd - Power Dissipation:
1.4W
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@10V;36mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
93pF
Number:
1 P-Channel
Output Capacitance(Coss):
130pF
Input Capacitance(Ciss):
870pF
Gate Charge(Qg):
7.8nC@4.5V
Mfr. Part #:
SP30P25T1
Package:
SOT-23-3L
Product Description
Product Overview
The SP30P25T1 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount SOT-23-3L package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: P-Channel MOSFET
- Package Type: SOT-23-3L
- Device Code: 30P25
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | -10V | 25 | m | ||
| -4.5V | 36 | m | ||||
| Continuous Drain Current | ID | -7 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | -7 | A | |||
| Pulse Drain Current | IDM | Tested | -28 | A | ||
| Power Dissipation | PD | 1.4 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 89.3 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -30 | - | V | |
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID =-4A | - | 25 | 38 | m |
| VGS=-4.5V , ID =-2A | - | 36 | 55 | m | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 870 | - | pF |
| Output Capacitance | Coss | - | 130 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 93 | - | pF | |
| Total Gate Charge | Qg | VDS=-15V , VGS=-4.5V , ID=-5A | - | 7.8 | - | nC |
| Gate-Source Charge | Qgs | - | 2.7 | - | ||
| Gate-Drain Charge | Qgd | - | 2.8 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-15V VGS=-10V , RG=6 , ID=-1A | - | 6.5 | - | nS |
| Turn-On Rise Time | tr | - | 8.8 | - | ||
| Turn-Off Delay Time | td(off) | - | 73 | - | ||
| Turn-Off Fall Time | tf | - | 44 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Package Information (SOT-23-3L) | ||||||
| Symbol | Dimensions in millimeters | Min. | Max. | Typ. | ||
| A | 1.050 | 1.250 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 1.050 | 1.150 | ||||
| b | 0.300 | 0.500 | ||||
| c | 0.100 | 0.200 | ||||
| D | 2.820 | 3.020 | ||||
| E | 1.500 | 1.700 | ||||
| E1 | 2.650 | 2.950 | ||||
| e | 0.950 | |||||
| e1 | 1.800 | 2.000 | ||||
| L | 0.300 | 0.600 | ||||
| 0 | 8 | |||||
Order Information:
| Device | Package | Unit/Tape |
|---|---|---|
| SP30P25T1 | SOT-23-3L | 3000 |
2504101957_Siliup-SP30P25T1_C41354960.pdf
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