N Channel 60 Volt MOSFET Slkor SL50N06D Suitable for PWM Motor Controls and High Energy Applications
Key Attributes
Model Number:
SL50N06D
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
104pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
900pF@25V
Pd - Power Dissipation:
136W
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
SL50N06D
Package:
TO-252
Product Description
Product Overview
The N-Channel 60-V Power MOSFET utilizes an advanced termination scheme for enhanced voltage-blocking capability and long-term performance. Designed for high voltage and high-speed switching applications, it excels in power supplies, converters, and PWM motor controls. Its energy-efficient design includes a fast-recovery drain-to-source diode, making it ideal for bridge circuits where diode speed and safe commutation areas are critical. This MOSFET offers excellent stability, uniformity, and a robust design for high energy in avalanche and commutation modes, providing an additional safety margin against voltage transients.
Product Attributes
- Brand: SLKORMicro (implied by website)
- Model Numbers: SL50N06D, SL50N06I
- Package Types: TO-252, TO-251
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 50 | A | |||
| Pulsed Diode Current | IDM | 150 | A | |||
| Power Dissipation | PD | 136 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | t10s | 100 | /W | ||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Static Electrical Characteristics | ||||||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID = 250A | 60 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID = 250A | 1.2 | 2.5 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS = 20V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS = 60V, VGS =0V | 1 | A | ||
| Drain-source on-state resistance | RDS(on) | VGS = 10V, ID = 30A | 14.5 | 20 | m | |
| Forward transconductance | gfs | VDS = 25V, ID = 25A | 24 | S | ||
| Diode forward voltage | VSD | IS= 10A, VGS=0V | 0.8 | 1.3 | V | |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS = 25V,VGS =0V, f=1MHz | 900 | pF | ||
| Output capacitance | Coss | 104 | pF | |||
| Reverse transfer capacitance | Crss | 33 | pF | |||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VDS = 25V,VGS = 10V, ID = 50A | 30 | nC | ||
| Gate-source charge | Qgs | 10 | nC | |||
| Gate-drain charge | Qg d | 5 | nC | |||
| Turn-on delay time | td(on) | VDD=30 V RL= 25, ID = 25A, VGEN= 10V,Rg= 25 | 25 | ns | ||
| Rise time | tr | 5 | ns | |||
| Turn-off delay time | td(off) | 50 | ns | |||
| Fall time | tf | 6 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Continuous Source-Drain Diode Current | IS | 50 | A | |||
| Pulsed Diode forward Current | ISM | 220 | A | |||
2410121531_Slkor-SL50N06D_C5122516.pdf
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