Power Switching N Channel MOSFET Featuring Low Gate Charge and 100V Rating Siliup SP010N15GNK Device

Key Attributes
Model Number: SP010N15GNK
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
40A
RDS(on):
15mΩ@10V;18mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Number:
1 N-channel
Output Capacitance(Coss):
356pF
Pd - Power Dissipation:
55W
Input Capacitance(Ciss):
1.069nF
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
SP010N15GNK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP010N15GNK is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, making it suitable for power switching applications, battery management, and uninterruptible power supplies. This device is available in a PDFN5X6-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP010N15GNK
  • Technology: N-Channel Power MOSFET
  • Package: PDFN5X6-8L
  • Marking: 010N15G

Technical Specifications

Product Summary Value
V(BR)DSS 100V
RDS(on) TYP (@10V) 15m
RDS(on) TYP (@4.5V) 18m
ID 40A
EAS 132mJ (Single Pulse Avalanche Energy)
PD (@Tc=25) 55W
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID 40 A
Continuous Drain Current (Tc=100) ID 27 A
Pulsed Drain Current IDM 160 A
Single Pulse Avalanche Energy EAS 132 mJ
Power Dissipation (Tc=25) PD 55 W
Thermal Resistance Junction-to-Case RJC 2.27 /W
Storage Temperature Range TSTG -55 to 150
Operating Junction Temperature Range TJ -55 to 150
Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 100 - - V
Drain Cut-Off Current IDSS VDS = 80V, VGS = 0V - - 1 uA
Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1 nA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.0 1.8 2.5 V
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 20A - 15 19 m
Drain-Source ON Resistance RDS(ON) VGS = 4.5V, ID = 10A - 18 24 m
Dynamic Characteristics
Input Capacitance Ciss VDS =50V, VGS = 0V, f = 1.0MHz - 1069 - pF
Output Capacitance Coss - - 356 - pF
Reverse Transfer Capacitance Crss - - 17 - pF
Total Gate Charge Qg VDS=50V , VGS=10V , ID=50A - 14 - nC
Gate-Source Charge Qgs - - 5 - nC
Gate-Drain Charge Qgd - - 2.7 - nC
Switching Characteristics
Turn-On Delay Time td(on) VGS = 50V, VDS =50V, ID=50A RG = 2.2 - 38 - nS
Rise Time tr - - 12 - nS
Turn-Off Delay Time td(off) - - 51 - nS
Fall Time tf - - 17 - nS
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - - 40 A
Reverse Recovery Time Trr IS=20A, di/dt=100A/us, TJ=25 - 40 - nS
Reverse Recovery Charge Qrr - - 42 - nC
Package Information Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254REF. 0.010REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 3.910 4.110 0.154 0.162
E1 3.375 3.575 0.133 0.141
D2 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270TYP. 0.050TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12

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