16V P Channel MOSFET Siliup SP1618T1 Featuring SOT 23 3L Package for Battery Switch and DC DC Converter
Key Attributes
Model Number:
SP1618T1
Product Custom Attributes
Drain To Source Voltage:
16V
Configuration:
-
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@4.5V;26mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
168pF
Number:
1 P-Channel
Output Capacitance(Coss):
200pF
Pd - Power Dissipation:
1.8W
Input Capacitance(Ciss):
1.821nF
Gate Charge(Qg):
20nC@4.5V
Mfr. Part #:
SP1618T1
Package:
SOT-23-3L
Product Description
Product Overview
The SP1618T1 is a 16V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount SOT-23-3L package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP1618T1
- Package: SOT-23-3L
- Marking: 1618
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -16 | V | |||
| RDS(on) | @-4.5V | 18 | m | |||
| RDS(on) | @-2.5V | 26 | m | |||
| Continuous Drain Current | ID | -7 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -16 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | -7 | A | |||
| Pulse Drain Current | IDM | -28 | A | |||
| Power Dissipation | PD | 1.8 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 69 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -16 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-13V, VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=12V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -0.4 | -0.65 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-5A | 18 | 23 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V, ID=-4.3A | 26 | 38 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-6V, VGS=0V, f=1MHz | 1821 | pF | ||
| Output Capacitance | Coss | 200 | pF | |||
| Reverse Transfer Capacitance | Crss | 168 | pF | |||
| Total Gate Charge | Qg | VDS=-6V, VGS=-4.5V, ID=-5A | 20 | nC | ||
| Gate-Source Charge | Qgs | 3.5 | ||||
| Gate-Drain Charge | Qg d | 2.5 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-6V, VGS=-4.5V, RG=2.7, ID=-4A | 7 | nS | ||
| Turn-On Rise Time | tr | 17 | ||||
| Turn-Off Delay Time | td(off) | 83 | ||||
| Turn-Off Fall Time | tf | 35 | ||||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V, IS=-1A, TJ=25 | -1.2 | V | ||
| Package Information (SOT-23-3L) | ||||||
| Symbol | Dimensions in millimeters | Min. | Max. | |||
| A | 1.050 | 1.250 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 1.050 | 1.150 | ||||
| b | 0.300 | 0.500 | ||||
| c | 0.100 | 0.200 | ||||
| D | 2.820 | 3.020 | ||||
| E | 1.500 | 1.700 | ||||
| E1 | 2.650 | 2.950 | ||||
| e | 0.950 (Typ.) | |||||
| e1 | 1.800 | 2.000 | ||||
| L | 0.300 | 0.600 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP1618T1_C41354940.pdf
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