20V N Channel MOSFET Siliup SP3416KT2 Featuring 2KV ESD Protection and 7A Continuous Current SOT 23
Key Attributes
Model Number:
SP3416KT2
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7A
RDS(on):
13mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
89pF
Number:
1 N-channel
Output Capacitance(Coss):
105pF
Input Capacitance(Ciss):
545pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
8nC@4.5V
Mfr. Part #:
SP3416KT2
Package:
SOT-23
Product Description
Product Overview
The SP3416KT2 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This high-performance device offers excellent power and current handling capabilities, making it suitable for applications such as battery switches and DC/DC converters. It features an ESD protected 2KV rating and is available in a surface mount SOT-23 package. The MOSFET provides low on-resistance at various gate-source voltages, ensuring efficient operation.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP3416KT2
- Technology: N-Channel MOSFET
- Package: SOT-23
- ESD Protection: 2KV
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 20 | V | |||
| On-Resistance | RDS(on) | @4.5V | 13 | m | ||
| On-Resistance | RDS(on) | @2.5V | 22 | m | ||
| Continuous Drain Current | ID | 7 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25) | 20 | V | ||
| Gate-Source Voltage | VGSS | (Ta=25) | 12 | V | ||
| Continuous Drain Current | ID | (Ta=25) | 7 | A | ||
| Pulse Drain Current | IDM | (Ta=25) | 28 | A | ||
| Power Dissipation | PD | (Ta=25) | 0.9 | W | ||
| Junction-to-Ambient Thermal Resistance | RJA | (Ta=25) | 138.8 | C/W | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.4 | 0.65 | 1.1 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=7A | - | 13 | 18 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V , ID=4A | - | 22 | 30 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 545 | - | pF |
| Output Capacitance | Coss | VDS=10V , VGS=0V , f=1MHz | - | 105 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=10V , VGS=0V , f=1MHz | - | 89 | - | pF |
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=5A | - | 8 | - | nC |
| Gate-Source Charge | Qgs | VDS=10V , VGS=4.5V , ID=5A | - | 2.4 | - | nC |
| Gate-Drain Charge | Qg | VDS=10V , VGS=4.5V , ID=5A | - | 3 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=10V VGS=4.5V , RG=3 , RL=1.5 | - | 0.5 | - | nS |
| Turn-On Rise Time | tr | VDD=10V VGS=4.5V , RG=3 , RL=1.5 | - | 1.2 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=10V VGS=4.5V , RG=3 , RL=1.5 | - | 11 | - | nS |
| Turn-Off Fall Time | tf | VDD=10V VGS=4.5V , RG=3 , RL=1.5 | - | 4 | - | nS |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-23) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| E1 | 2.25 | 2.55 | ||||
| e | (REF.) | 0.95 | ||||
| e1 | 1.80 | 2.00 | ||||
| L | (REF.) | 0.55 | ||||
| L1 | 0.30 | 0.50 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP3416KT2_C41354924.pdf
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