SOT 23 Surface Mount 20V N Channel MOSFET Siliup SP2302BT2 for Battery Switch and Converter Circuits
Key Attributes
Model Number:
SP2302BT2
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
2.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
800mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
1 N-channel
Output Capacitance(Coss):
65pF
Pd - Power Dissipation:
500mW
Input Capacitance(Ciss):
277pF
Gate Charge(Qg):
2.8nC@4.5V
Mfr. Part #:
SP2302BT2
Package:
SOT-23
Product Description
Product Overview
The SP2302BT2 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features high power and current handling capability, making it suitable for applications such as battery switches and DC/DC converters. This surface mount device is available in a SOT-23 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP2302BT2
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| Product Summary | |||||||
| V(BR)DSS | 20 | V | |||||
| RDS(on)TYP | @4.5V | 45 | 60 | m | |||
| ID | @2.5V | 2.1 | A | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | |||||||
| Drain-Source Voltage | VDSS | 20 | V | ||||
| Gate-Source Voltage | VGSS | 10 | V | ||||
| Continuous Drain Current | ID | 2.1 | A | ||||
| Pulse Drain Current | IDM | Tested | 8.4 | A | |||
| Power Dissipation | PD | 0.5 | W | ||||
| Thermal Resistance Junction-to-Ambient | RJA | 250 | C/W | ||||
| Storage Temperature Range | TSTG | -55 | 150 | C | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 20 | - | - | V | |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V | - | - | 1 | uA | |
| Gate-Source Leakage Current | IGSS | VGS=10V , VDS=0V | - | - | 1 | uA | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.6 | 0.8 | 1.1 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID =3A | - | 45 | 60 | m | |
| VGS=2.5V , ID =2A | - | 60 | 80 | m | |||
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 277 | - | pF | |
| Output Capacitance | Coss | - | 65 | - | pF | ||
| Reverse Transfer Capacitance | Crss | - | 35 | - | pF | ||
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=2.5A | - | 2.8 | - | nC | |
| Gate-Source Charge | Qgs | - | 0.61 | - | |||
| Gate-Drain Charge | Qg | - | 0.63 | - | |||
| Turn-On Delay Time | td(on) | VDD=10V VGS=4.5V , RG=6 , ID=1A | - | 2.65 | - | nS | |
| Turn-On Rise Time | tr | - | 4.2 | - | |||
| Turn-Off Delay Time | td(off) | - | 9.9 | - | |||
| Turn-Off Fall Time | tf | - | 5.1 | - | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V | |
| Package Information (SOT-23) | |||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | ||||
| A | 0.90 | 1.15 | |||||
| A1 | 0.00 | 0.10 | |||||
| A2 | 0.90 | 1.05 | |||||
| b | 0.30 | 0.50 | |||||
| c | 0.08 | 0.15 | |||||
| D | 2.80 | 3.00 | |||||
| E | 1.20 | 1.40 | |||||
| E1 | 2.25 | 2.55 | |||||
| e | REF. | 0.95 | |||||
| e1 | 1.80 | 2.00 | |||||
| L | REF. | 0.55 | |||||
| L1 | 0.30 | 0.50 | |||||
| 0 | 8 | ||||||
2504101957_Siliup-SP2302BT2_C41354907.pdf
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