SOT 23 3L Package N Channel MOSFET 100V Siliup SP010N110GT1 for Battery Switch and DC DC Converter
Key Attributes
Model Number:
SP010N110GT1
Product Custom Attributes
Drain To Source Voltage:
100V
Configuration:
-
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
110mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Reverse Transfer Capacitance (Crss@Vds):
1.4pF
Number:
1 N-channel
Output Capacitance(Coss):
29pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
206pF
Gate Charge(Qg):
4.3nC@10V
Mfr. Part #:
SP010N110GT1
Package:
SOT-23-3L
Product Description
Product Overview
The SP010N110GT1 is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount SOT-23-3L package. This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Package Type: SOT-23-3L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| RDS(on) Typ | @10V | 110 | m | |||
| ID | 3 | A | ||||
| RDS(on) Typ | @4.5V | 160 | m | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 100 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 3 | A | |||
| Pulse Drain Current | IDM | Tested | 12 | A | ||
| Power Dissipation | PD | 1.2 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 104 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=60V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1.0 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =3A | - | 110 | 140 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =2A | - | 160 | 300 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 206 | - | pF |
| Output Capacitance | Coss | - | 29 | - | ||
| Reverse Transfer Capacitance | Crss | - | 1.4 | - | ||
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=3A | - | 4.3 | - | nC |
| Gate-Source Charge | Qgs | - | 1.5 | - | ||
| Gate-Drain Charge | Qg | - | 1.1 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=50V VGS=10V , RG=2, ID=3A | - | 14.7 | - | nS |
| Turn-On Rise Time | tr | - | 3.5 | - | ||
| Turn-Off Delay Time | td(off) | - | 20.9 | - | ||
| Turn-Off Fall Time | tf | - | 2.7 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| SOT-23-3L Package Information | |||
|---|---|---|---|
| Symbol | Dimensions in millimeters | Min. | Max. |
| A | 1.050 | 1.250 | |
| A1 | 0.000 | 0.100 | |
| A2 | 1.050 | 1.150 | |
| b | 0.300 | 0.500 | |
| c | 0.100 | 0.200 | |
| D | 2.820 | 3.020 | |
| E | 1.500 | 1.700 | |
| E1 | 2.650 | 2.950 | |
| e | 0.950 (Typ.) | ||
| e1 | 1.800 | 2.000 | |
| L | 0.300 | 0.600 | |
| 0 | 8 | ||
2504101957_Siliup-SP010N110GT1_C41349579.pdf
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