High current MOSFET Slkor SL120N03D featuring trench technology for power management and switching
Key Attributes
Model Number:
SL120N03D
Product Custom Attributes
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Output Capacitance(Coss):
-
Pd - Power Dissipation:
-
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
SL120N03D
Package:
TO-252
Product Description
Product Overview
This Power MOSFET utilizes advanced TRENCH technology, engineered to minimize conduction losses, deliver superior switching performance, and provide robust protection against high energy pulses in avalanche and commutation modes. It is ideal for applications requiring efficient power management, such as PWM applications and load switching.
Product Attributes
- Brand: SLKORMicro
- Model: SL120N03D
- Technology: TRENCH
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
| Absolute Maximum Ratings | ||||
| Drain-source Voltage | VDS | 30 | V | |
| Gate-source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 120 | A | TC=25 |
| Continuous Drain Current | ID | 78 | A | TC=100 |
| Pulsed Drain Current | IDM | 480 | A | (TC=25,Tp Limited By Tjmax) (note1) |
| Maximum Power Dissipation | PD | 88 | W | (TC=25) |
| Avalanche energy, single Pulse | EAS | 342 | mJ | (L=0.5mH) (note2) |
| Operating Junction And Storage Temperature | Tj,Tstg | -55 To 150 | ||
| Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds | TL | 300 | ||
| Junction-to-Case Thermal Resistance | RJC | 1.4 | /W | Max |
| Electrical Characteristics (TC=25 unless otherwise noted) | ||||
| Drain-source breakdown voltage | BVDSS | 30 | V | VGS=0V, ID=250A |
| Zero gate voltage drain current | IDSS | 1 | A | VDS=30V, VGS=0V |
| Gate-source leakage current | IGSS | ±100 | nA | VGS=±20V, VDS=0V |
| Gate threshold voltage | VGS(th) | 1.0-2.2 | V | VDS=VGS, ID=250A (Min. Typ. Max.) |
| Drain-source on-state resistance | RDS(on) | 2.6 | m | VGS=10V, ID=20A (Typ.) |
| Drain-source on-state resistance | RDS(on) | 3.6 | m | VGS=4.5V, ID=15A (Typ.) |
| Input Capacitance | Ciss | 4000 | PF | VGS=0V, VDS=15V, f=1.0MHz (Typ.) |
| Output Capacitance | Coss | 437 | PF | VGS=0V, VDS=15V, f=1.0MHz (Typ.) |
| Reverse Transfer Capacitance | Crss | 396 | PF | VGS=0V, VDS=15V, f=1.0MHz (Typ.) |
| Turn-on delay time | td(on) | 14 | nS | VDS=15V, ID=30A, VGS=10V RL=3, Tj=25 (Typ.) |
| Turn-on Rise time | tr | 18 | nS | VDS=15V, ID=30A, VGS=10V RL=3, Tj=25 (Typ.) |
| Turn-off delay time | td(off) | 40 | nS | VDS=15V, ID=30A, VGS=10V RL=3, Tj=25 (Typ.) |
| Turn-off Fall time | tf | 12 | nS | VDS=15V, ID=30A, VGS=10V RL=3, Tj=25 (Typ.) |
| Gate Total Charge | QG | 72 | nC | VGS=10V, VDS=15V, ID=30A (Typ.) |
| Gate-Source Charge | QgS | 46 | nC | VGS=10V, VDS=15V, ID=30A (Typ.) |
| Gate-Drain Charge | QgD | 13 | nC | VGS=10V, VDS=15V, ID=30A (Typ.) |
| Body Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, ISD=30A, TJ=25 (Typ.) |
| Body Diode Forward Current | Is | 120 | A | |
| Body Diode Reverse Recovery Time | Trr | 48 | ns | TJ=25, ISD=30A, VGS=0V, di/dt =100A/s (Typ.) |
| Body Diode Reverse Recovery Charge | Qrr | 80 | nC | TJ=25, ISD=30A, VGS=0V, di/dt =100A/s (Typ.) |
2312160125_Slkor-SL120N03D_C19632492.pdf
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