Siliup SP60N13GDNJ N Channel 60V MOSFET with PDFN3X3 8L Package and Single Pulse Avalanche Energy Test
Key Attributes
Model Number:
SP60N13GDNJ
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
2 N-Channel
Output Capacitance(Coss):
235pF
Input Capacitance(Ciss):
940pF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
15.9nC@10V
Mfr. Part #:
SP60N13GDNJ
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The SP60N13GDNJ is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., engineered with advanced Split Gate Trench Technology for fast switching speeds and high performance. Designed for surface mounting, this MOSFET is ideal for DC-DC converters and motor control applications. It features 100% single pulse avalanche energy testing, ensuring reliability in demanding environments.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP60N13GDNJ
- Technology: Advanced Split Gate Trench Technology
- Package: PDFN3X3-8L
- Channel Type: N-Channel
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Product Summary | ||
| V(BR)DSS | RDS(on)TYP | ID |
| 60V | 13m@10V / 16m@4.5V | 18A |
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | |||
| Parameter | Symbol | Rating | Unit |
| Drain-Source Voltage | VDSS | 60 | V |
| Gate-Source Voltage | VGSS | 20 | V |
| Continuous Drain Current (Tc=25C) | ID | 18 | A |
| Continuous Drain Current (Tc=100C) | ID | 12 | A |
| Pulse Drain Current Tested | IDM | 72 | A |
| Single Pulse Avalanche Energy | EAS | 64 | mJ |
| Power Dissipation (Tc=25C) | PD | 30 | W |
| Thermal Resistance Junction-to-Case | RJC | 4.17 | C/W |
| Maximum Junction Temperature | TJ | -55 to 150 | C |
| Storage Temperature Range | TSTG | -55 to 150 | C |
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Characteristics | Symbol | Test Condition | Min | Typ | Max | Unit |
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | 1.8 | 2.5 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=15A | - | 13 | 16 | m |
| Drain-Source On-state Resistance | RDS(ON) | VGS=4.5V, ID=10A | - | 16 | 21 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=30V, F=1MHz | - | 940 | - | pF |
| Output Capacitance | Coss | VGS=0V, VDS=30V, F=1MHz | - | 235 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=30V, F=1MHz | - | 10 | - | pF |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=10A | - | 15.9 | - | nC |
| Gate-Source Charge | Qgs | VDS=30V, VGS=10V, ID=10A | - | 2.8 | - | nC |
| Gate-Drain Charge | Qgd | VDS=30V, VGS=10V, ID=10A | - | 4.2 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V, ID=10A, VGS=10V, RG=4.7 | - | 4 | - | nS |
| Rise Time | tr | VDD=30V, ID=10A, VGS=10V, RG=4.7 | - | 6 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=30V, ID=10A, VGS=10V, RG=4.7 | - | 18.8 | - | nS |
| Fall Time | tf | VDD=30V, ID=10A, VGS=10V, RG=4.7 | - | 6.4 | - | nS |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 18 | A | |
| Reverse Recovery Time | Trr | IS=10 A, di/dt=100 A/s, TJ=25 | - | 19 | - | nS |
| Reverse Recovery Charge | Qrr | IS=10 A, di/dt=100 A/s, TJ=25 | - | 12 | - | nC |
| Package Information | ||||
| Symbol | Dimensions (mm) | Dimensions (inches) | ||
| Min. | Max. | Min. | Max. | |
| A | 0.650 | 0.850 | 0.026 | 0.033 |
| A1 | 0.152 REF. | 0.006 REF. | ||
| A2 | 0~0.05 | 0~0.002 | ||
| D | 2.900 | 3.100 | 0.114 | 0.122 |
| D1 | 0.935 | 1.135 | 0.037 | 0.045 |
| D2 | 0.280 | 0.480 | 0.011 | 0.019 |
| E | 2.900 | 3.100 | 0.114 | 0.122 |
| E1 | 3.150 | 3.450 | 0.124 | 0.136 |
| E2 | 1.535 | 1.935 | 0.060 | 0.076 |
| b | 0.200 | 0.400 | 0.008 | 0.016 |
| e | 0.550 | 0.750 | 0.022 | 0.030 |
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| L1 | 0.180 | 0.480 | 0.007 | 0.019 |
| L2 | 0~0.100 | 0~0.004 | ||
| L3 | 0~0.100 | 0~0.004 | ||
| H | 0.315 | 0.515 | 0.012 | 0.020 |
| 9 | 13 | 9 | 13 | |
| Order Information | ||
| Device | Package | Unit/Tape |
| SP60N13GDNJ | PDFN3X3-8L | 5000 |
2504101957_Siliup-SP60N13GDNJ_C22466782.pdf
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