Dual N Channel Power MOSFET Siliup SP30N08GDNJ 30V Low Gate Charge Fast Switching for DC DC Converter

Key Attributes
Model Number: SP30N08GDNJ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
18A
RDS(on):
8.5mΩ@10V;12mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
2 N-Channel
Output Capacitance(Coss):
240pF
Pd - Power Dissipation:
18W
Input Capacitance(Ciss):
625pF
Gate Charge(Qg):
7.1nC@10V
Mfr. Part #:
SP30N08GDNJ
Package:
PDFN-8L(3x3)
Product Description

Product Overview

The SP30N08GDNJ is a 30V Dual N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications and isolated DC/DC converters in telecom and industrial sectors.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: Dual N-Channel Power MOSFET
  • Technology: Advanced Split Gate Trench Technology
  • Testing: 100% Single Pulse Avalanche Energy Test

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
Drain-Source Voltage V(BR)DSS 30 V
RDS(on) @10V 8.5 m
RDS(on) @4.5V 12 m
Continuous Drain Current ID 18 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS -20 20 V
Continuous Drain Current (Tc=25C) ID 18 A
Continuous Drain Current (Tc=100C) ID 12 A
Pulse Drain Current IDM Tested 72 A
Single Pulse Avalanche Energy EAS 1 39.2 mJ
Power Dissipation (Tc=25C) PD 18 W
Thermal Resistance Junction-to-Case RJC 6.94 C/W
Maximum Junction Temperature TJ -55 150 C
Storage Temperature Range TSTG -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250mA 30 - - V
Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V - - 1 uA
Gate Leakage Current IGSS VGS=20V, VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 1 1.7 2.5 V
Drain-Source On-state Resistance RDS(ON) VGS=10V, ID=15A - 8.5 11 m
Drain-Source On-state Resistance RDS(ON) VGS=4.5V, ID=10A - 12 16 m
Dynamic Characteristics
Input Capacitance Ciss VGS=0V, VDS=15V, F=1MHz - 625 - pF
Output Capacitance Coss - 240 - pF
Reverse Transfer Capacitance Crss - 25 - pF
Total Gate Charge Qg VDS=15V, VGS=10V, ID=10A - 7.1 - nC
Gate-Source Charge Qgs - 2.2 - nC
Gate-Drain Charge Qgd - 3.1 - nC
Switching Characteristics
Turn-On Delay Time td(on) VDD=15V, ID=10A, VGS=10V, RG=4.7 - 7 - nS
Rise Time tr - 18.8 - nS
Turn-Off Delay Time td(off) - 19.5 - nS
Fall Time tf - 3.4 - nS
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 18 A
Reverse Recovery Time Trr IS=10 A,di/dt=100 A/sTJ=25 - 12 - nS
Reverse Recovery Charge Qrr - 19 - nC
Package Information
Package Type PDFN3X3-8L
Dimensions (Millimeters) Min. Max.
A 0.650 0.850
A1 0.152 REF.
A2 0 0.05
D 2.900 3.100
D1 0.935 1.135
D2 0.280 0.480
E 2.900 3.100
E1 3.150 3.450
E2 1.535 1.935
b 0.200 0.400
e 0.550 0.750
L 0.300 0.500
L1 0.180 0.480
L2 0 0.100
L3 0 0.100
H 0.315 0.515
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2504101957_Siliup-SP30N08GDNJ_C22466706.pdf

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