Siliup SP40N04TH 40V N Channel MOSFET Featuring Fast Switching and Low Gate Charge for Power Control

Key Attributes
Model Number: SP40N04TH
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
85A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.1mΩ@10V;5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
500pF
Number:
1 N-channel
Output Capacitance(Coss):
900pF
Pd - Power Dissipation:
80W
Input Capacitance(Ciss):
5nF
Gate Charge(Qg):
71nC@10V
Mfr. Part #:
SP40N04TH
Package:
TO-252-2L
Product Description

Product Overview

The SP40N04TH is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This MOSFET is designed for fast switching, low gate charge, and low Rdson, making it suitable for applications such as DC-DC converters and load switching. It features 100% single pulse avalanche energy testing for reliability.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: 40N04

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS 40 V
RDS(on)TYP @10V 4.1 6 m
RDS(on)TYP @4.5V 5 7 m
ID 85 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID (TC=25) 85 A
Continuous Drain Current ID (TC=100) 57 A
Pulsed Drain Current IDM 340 A
Single Pulse Avalanche Energy EAS 288 mJ
Power Dissipation PD (TC=25) 80 W
Thermal Resistance Junction-to-Case RJC 1.6 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 40 - - V
Drain-Source Leakage Current IDSS VDS=32V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.6 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=20A - 4.1 6 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=20A - 5 7 m
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz - 3785 - pF
Output Capacitance Coss - 285 -
Reverse Transfer Capacitance Crss - 256 -
Total Gate Charge Qg VDS=20V , VGS=10V , ID=30A - 71 - nC
Gate-Source Charge Qgs - 15.3 -
Gate-Drain Charge Qg d - 14.5 -
Turn-On Delay Time Td(on) VDD=20V VGS=10V , RG=3, ID=30A - 12 - nS
Rise Time Tr - 28 -
Turn-Off Delay Time Td(off) - 63 -
Fall Time Tf - 12 -
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 85 A
Reverse Recovery Time Trr IS=20A, di/dt=100A/us, TJ=25 - 17 - nS
Reverse Recovery Charge Qrr - 9 - nC
Package Information (TO-252)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 2.200 - 2.400 0.087 - 0.094
A1 0.000 - 0.127 0.000 - 0.005
b 0.660 - 0.860 0.026 - 0.034
c 0.460 - 0.580 0.018 - 0.023
D 6.500 - 6.700 0.256 - 0.264
D1 5.100 - 5.460 0.201 - 0.215
D2 4.830 REF. 0.190 REF.
E 6.000 - 6.200 0.236 - 0.244
e 2.186 - 2.386 0.086 - 0.094
L 9.800 - 10.400 0.386 - 0.409
L1 2.900 REF. 0.114 REF.
L2 1.400 - 1.700 0.055 - 0.067
L3 1.600 REF. 0.063 REF.
L4 0.600 - 1.000 0.024 - 0.039
1.100 - 1.300 0.043 - 0.051
0 - 8 0 - 8
h 0.000 - 0.300 0.000 - 0.012
V 5.350 REF. 0.211 REF.

2504101957_Siliup-SP40N04TH_C41355041.pdf

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