Siliup SP40N04TH 40V N Channel MOSFET Featuring Fast Switching and Low Gate Charge for Power Control
Product Overview
The SP40N04TH is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This MOSFET is designed for fast switching, low gate charge, and low Rdson, making it suitable for applications such as DC-DC converters and load switching. It features 100% single pulse avalanche energy testing for reliability.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 40N04
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 40 | V | ||||
| RDS(on)TYP | @10V | 4.1 | 6 | m | ||
| RDS(on)TYP | @4.5V | 5 | 7 | m | ||
| ID | 85 | A | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (TC=25) | 85 | A | ||
| Continuous Drain Current | ID | (TC=100) | 57 | A | ||
| Pulsed Drain Current | IDM | 340 | A | |||
| Single Pulse Avalanche Energy | EAS | 288 | mJ | |||
| Power Dissipation | PD | (TC=25) | 80 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.6 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | - | 4.1 | 6 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=20A | - | 5 | 7 | m |
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 3785 | - | pF |
| Output Capacitance | Coss | - | 285 | - | ||
| Reverse Transfer Capacitance | Crss | - | 256 | - | ||
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=30A | - | 71 | - | nC |
| Gate-Source Charge | Qgs | - | 15.3 | - | ||
| Gate-Drain Charge | Qg d | - | 14.5 | - | ||
| Turn-On Delay Time | Td(on) | VDD=20V VGS=10V , RG=3, ID=30A | - | 12 | - | nS |
| Rise Time | Tr | - | 28 | - | ||
| Turn-Off Delay Time | Td(off) | - | 63 | - | ||
| Fall Time | Tf | - | 12 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 85 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 17 | - | nS |
| Reverse Recovery Charge | Qrr | - | 9 | - | nC | |
| Package Information (TO-252) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 2.200 - 2.400 | 0.087 - 0.094 | ||||
| A1 | 0.000 - 0.127 | 0.000 - 0.005 | ||||
| b | 0.660 - 0.860 | 0.026 - 0.034 | ||||
| c | 0.460 - 0.580 | 0.018 - 0.023 | ||||
| D | 6.500 - 6.700 | 0.256 - 0.264 | ||||
| D1 | 5.100 - 5.460 | 0.201 - 0.215 | ||||
| D2 | 4.830 REF. | 0.190 REF. | ||||
| E | 6.000 - 6.200 | 0.236 - 0.244 | ||||
| e | 2.186 - 2.386 | 0.086 - 0.094 | ||||
| L | 9.800 - 10.400 | 0.386 - 0.409 | ||||
| L1 | 2.900 REF. | 0.114 REF. | ||||
| L2 | 1.400 - 1.700 | 0.055 - 0.067 | ||||
| L3 | 1.600 REF. | 0.063 REF. | ||||
| L4 | 0.600 - 1.000 | 0.024 - 0.039 | ||||
| 1.100 - 1.300 | 0.043 - 0.051 | |||||
| 0 - 8 | 0 - 8 | |||||
| h | 0.000 - 0.300 | 0.000 - 0.012 | ||||
| V | 5.350 REF. | 0.211 REF. | ||||
2504101957_Siliup-SP40N04TH_C41355041.pdf
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