Advanced Trench Technology P Channel MOSFET Slkor SL50P06D with Low On Resistance and Thermal Stability
Key Attributes
Model Number:
SL50P06D
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
211pF@20V
Number:
1 P-Channel
Pd - Power Dissipation:
270W
Input Capacitance(Ciss):
4.399nF@20V
Gate Charge(Qg):
114nC@10V
Mfr. Part #:
SL50P06D
Package:
TO-252
Product Description
Product Overview
This P-Channel MOSFET utilizes advanced trench technology and design to achieve excellent RDS(on) with low gate charge, making it suitable for a wide range of applications. It features a high cell density trench technology for ultra-low RDS(ON) and an excellent package design for effective heat dissipation. A green device option is also available.
Product Attributes
- Brand: SLKORMicro
- Model: SL50P06D
- Package: TO-252
- Certifications: Green device available
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | TC=25 | -60 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current-TC=25 | ID | -50 | A | |||
| Continuous Drain Current-TC=100 | ID | -40 | A | |||
| Pulsed Drain Current | IDM | 1 | -280 | A | ||
| Total Power Dissipation | PD | 270 | W | |||
| Single Pulsed Avalanche Energy | EAS | 2 | 700 | mJ | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | +150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to Case | RJC | 0.46 | /W | |||
| Electrical Characteristics | ||||||
| Drain-Sourtce Breakdown Voltage | BVDSS | VGS=0V,ID=-250A | -60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-60V | -1 | A | ||
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0A | ±100 | nA | ||
| GATE-Source Threshold Voltage | VGS(th) | VGS=VDS, ID=-250A | -1.1 | -1.6 | -2.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V,ID=-20A | 16.5 | 20 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V,ID=-20A | 18.5 | 22 | m | |
| Input Capacitance | Ciss | VDS=-20V, VGS=0V, f=1MHz | 4399 | pF | ||
| Output Capacitance | Coss | VDS=-20V, VGS=0V, f=1MHz | 258 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-20V, VGS=0V, f=1MHz | 211 | pF | ||
| Turn-On Delay Time | td(on) | VDD=-30V, ID=-20A, VGS=-10V, RG=1 | 23 | ns | ||
| Rise Time | tr | VDD=-30V, ID=-20A, VGS=-10V, RG=1 | 17 | ns | ||
| Turn-Off Delay Time | td(off) | VDD=-30V, ID=-20A, VGS=-10V, RG=1 | 55 | ns | ||
| Fall Time | tf | VDD=-30V, ID=-20A, VGS=-10V, RG=1 | 29 | ns | ||
| Total Gate Charge | Qg | VGS=-10V, VDS=-30V, ID=-20A | 114 | nC | ||
| Gate-Source Charge | Qgs | VGS=-10V, VDS=-30V, ID=-20A | 27.3 | nC | ||
| Gate-Drain Miller Charge | Qgd | VGS=-10V, VDS=-30V, ID=-20A | 49 | nC | ||
| Drain Diode Forward Voltage | VSD | VGS=0V,IS=-20A | -1.2 | V | ||
| Continuous Source Current | IS | VG=VD=0V | -50 | A | ||
| Pulsed Source Current | ISM | -280 | A | |||
| Reverse Recovery Time | Trr | T J = 25C, IF =-20A, di/dt =100A/s | 117 | nS | ||
| Reverse Recovery Charge | Qrr | T J = 25C, IF =-20A, di/dt =100A/s | 420 | nC | ||
2212130930_Slkor-SL50P06D_C5330390.pdf
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