100V N Channel MOSFET Siliup SP010N90NJ designed for fast switching and power management applications
Key Attributes
Model Number:
SP010N90NJ
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
120mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
35W
Gate Charge(Qg):
16nC
Mfr. Part #:
SP010N90NJ
Package:
PDFN3X3-8L
Product Description
Product Overview
The SP010N90NJ is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low on-resistance, and 100% single pulse avalanche energy testing. This MOSFET is suitable for applications such as DC-DC converters and power management, and is available in a PDFN3X3-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Package: PDFN3X3-8L
- Device Code: SP010N90NJ
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | - | - | - | - | 100 | V |
| RDS(on)TYP | - | @10V | - | 90 | - | m |
| RDS(on)TYP | - | @4.5V | - | 100 | - | m |
| ID | - | - | - | - | 8 | A |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | - | - | - | 100 | V |
| Gate-Source Voltage | VGSS | - | - | ±20 | - | V |
| Continuous Drain Current (Tc=25C) | ID | - | - | - | 8 | A |
| Continuous Drain Current (Tc=100C) | ID | - | - | - | 5 | A |
| Pulse Drain Current Tested | IDM | - | - | - | 32 | A |
| Single Pulse Avalanche Energy | EAS | - | - | - | 12 | mJ |
| Power Dissipation (Tc=25C) | PD | - | - | - | 35 | W |
| Thermal Resistance Junction-to-Case | RJC | - | - | - | 3.6 | C/W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | C |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | C |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±20V , VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=8A | - | 90 | 110 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=6A | - | 100 | 120 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 845 | - | pF |
| Output Capacitance | Coss | - | - | 30 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 23 | - | pF |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=8A | - | 16 | - | nC |
| Gate-Source Charge | Qgs | - | - | 2.5 | - | nC |
| Gate-Drain Charge | Qg | - | - | 2.6 | - | nC |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=50V VGS=10V , RG=3, ID=8A | - | 5 | - | nS |
| Rise Time | Tr | - | - | 21 | - | nS |
| Turn-Off Delay Time | Td(off) | - | - | 24 | - | nS |
| Fall Time | Tf | - | - | 3 | - | nS |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 8 | A |
| Reverse recover time | Trr | IS=8A, di/dt=100A/us, Tj=25 | - | 27 | - | nS |
| Reverse recovery charge | Qrr | - | - | 21 | - | nC |
Note: The EAS test condition is VDD=50V, VG=10V, L=0.5mH, Rg=25
Package Information (PDFN3X3-8L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 0.650 | 0.850 | 0.026 | 0.033 |
| A1 | 0.152 | REF. | 0.006 | REF. |
| A2 | 0~0.05 | - | 0~0.002 | - |
| D | 2.900 | 3.100 | 0.114 | 0.122 |
| D1 | 2.300 | 2.600 | 0.091 | 0.102 |
| E | 2.900 | 3.100 | 0.114 | 0.122 |
| E1 | 3.150 | 3.450 | 0.124 | 0.136 |
| E2 | 1.535 | 1.935 | 0.060 | 0.076 |
| b | 0.200 | 0.400 | 0.008 | 0.016 |
| e | 0.550 | 0.750 | 0.022 | 0.030 |
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| L1 | 0.180 | 0.480 | 0.007 | 0.019 |
| L2 | 0~0.100 | - | 0~0.004 | - |
| L3 | 0~0.100 | - | 0~0.004 | - |
| H | 0.315 | 0.515 | 0.012 | 0.020 |
| 9 | 13 | 9 | 13 |
2505291610_Siliup-SP010N90NJ_C48888435.pdf
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