power switching device Siliup SP40P19P8 40V P Channel MOSFET with low gate charge and fast switching
Key Attributes
Model Number:
SP40P19P8
Product Custom Attributes
Drain To Source Voltage:
40V
Configuration:
-
Current - Continuous Drain(Id):
8A
RDS(on):
19mΩ@10V;23mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds):
131pF
Number:
1 P-Channel
Output Capacitance(Coss):
221pF
Input Capacitance(Ciss):
853pF
Pd - Power Dissipation:
1.8W
Gate Charge(Qg):
26nC@10V
Mfr. Part #:
SP40P19P8
Package:
SOP-8L
Product Description
Product Overview
The SP40P19P8 is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on). This MOSFET is designed for power switching applications, including hard-switched and high-frequency circuits, as well as Uninterruptible Power Supply (UPS) systems. It is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 40P19
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -40 | V | |||
| RDS(on) | RDS(on) | @ -10V | 19 | 25 | m | |
| RDS(on) | RDS(on) | @ -4.5V | 23 | 31 | m | |
| Continuous Drain Current | ID | -8 | A | |||
| Features | ||||||
| Fast Switching | ||||||
| Low Gate Charge and Rdson | ||||||
| 100% Single Pulse avalanche energy Test | ||||||
| Applications | ||||||
| Power Switching Application | ||||||
| Hard switched and high frequency circuits | ||||||
| Uninterruptible Power Supply | ||||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -8 | A | |||
| Pulsed Drain Current | IDM | -32 | A | |||
| Single Pulse Avalanche Energy | EAS | 36 | mJ | |||
| Power Dissipation | PD | 1.8 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 69.4 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -40 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-32V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.7 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-5A | 19 | 25 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-5A | 23 | 31 | m | |
| Input Capacitance | Ciss | VDS=-20V , VGS=0V , f=1MHz | 1653 | pF | ||
| Output Capacitance | Coss | 190 | pF | |||
| Reverse Transfer Capacitance | Crss | 170 | pF | |||
| Total Gate Charge | Qg | VDS=-20V , VGS=-10V , ID=-5A | 26 | nC | ||
| Gate-Source Charge | Qgs | 5.2 | ||||
| Gate-Drain Charge | Qgd | 17 | ||||
| Turn-On Delay Time | td(on) | VDD=-20V VGS=-10V , RG=2, ID=-5A | 9 | nS | ||
| Rise Time | tr | 8.5 | ||||
| Turn-Off Delay Time | td(off) | 63 | ||||
| Fall Time | tf | 52 | ||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A | -1.2 | V | ||
| Package Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP40P19P8 | SOP-8L | 4000 | ||||
| SOP-8L Package Dimensions (Millimeters) | ||||||
| Symbol | Dimensions | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | (REF.) | 1.27 | ||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP40P19P8_C42372335.pdf
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