silicon carbide mosfet Slkor SL42N120A featuring fast switching speeds and high junction temperature
Key Attributes
Model Number:
SL42N120A
Product Custom Attributes
Mfr. Part #:
SL42N120A
Package:
TO-247-3
Product Description
Product Overview
The SL42N120A is a high-voltage, low-conduction resistance Silicon Carbide (SiC) MOSFET designed for high-efficiency power applications. It features a high operating junction temperature, fast switching speeds, and small parasitic capacitance. This device is ideal for demanding applications such as photovoltaic inverters, UPS power supplies, motor drives, high-voltage DC/DC converters, and switching power supplies.
Product Attributes
- Brand: SLKOR
- Material: SiC MOSFET
- Package: TO-247-3
- Certifications: JEDEC TO247, Variation AD
Technical Specifications
| Symbol | Parameter | Typical Value | Unit | Test Condition | Notes |
| Maximum Ratings (TC=25C unless otherwise specified) | |||||
| VDS | Drain-Source Voltage | 1200 | V | VGS=0V, ID=100A | |
| VGS | Gate-Source Voltage | -5 to 20 | V | Recommended operating range | |
| ID | Drain-Source Current | 42 | A | VGS=20V, TC=25C | Fig. 21 |
| ID | Drain-Source Current | 31 | A | VGS=20V, TC=100C | |
| IDM | Pulsed Drain-Source Current | 70 | A | Determine by device safe operating area | Fig. 24 |
| PTOT | Maximum Dissipation Power | 300 | W | TC=25C | Fig. 22 |
| Tstg | Storage Temperature Range | -55 to 175 | C | ||
| TJ | Operating Junction Temperature Range | -55 to 175 | C | ||
| TL | Soldering Temperature | 260 | C | Wave soldering at leads, 1.6 mm from case, less than 10 seconds | |
| Thermal Characteristics | |||||
| R(J-C) | Thermal Resistance Junction-to-Case | 0.5 | C/W | Fig. 23 | |
| Electrical Characteristics (TC=25C unless otherwise specified) | |||||
| IDSS | Drain Leakage Current at Cut-off | 5 | A | VDS=1200V, VGS=0V | |
| IDSS | Drain Leakage Current at Cut-off | 100 | A | VDS=1200V, VGS=0V | |
| IGSS | Gate Leakage Current | +100 | nA | VDS=0V, VGS=-5~20V | |
| VTH | Threshold Voltage | 3.6 | V | VGS=VDS, ID=3.8mA | Fig. 8, 9 |
| VTH | Threshold Voltage | 2.7 | V | VGS=VDS, ID=3.8mA @ TC=175C | |
| RON | On-Resistance | 80 | m | VGS=20V, ID=10A @TJ=25C | Fig. 4, 5, 6, 7 |
| RON | On-Resistance | 130 | m | VGS=20V, ID=10A @TJ=175C | |
| Ciss | Input Capacitance | 1680 | pF | VDS=800V, VGS=0V, f=1MHZ, VAC=25mV | Fig. 16 |
| Coss | Output Capacitance | 69 | pF | ||
| Crss | Reverse Transfer Capacitance | 6.7 | pF | ||
| Eoss | Output Capacitance Stored Energy | 27 | J | Fig. 17 | |
| EAS | Single Pulse Avalanche Energy | 0.75 | J | ID=20A, VDD=50V, L=2mH | |
| Qg | Total Gate Charge | 76 | nC | VDS=800V, ID=20A, VGS=-5 to 20V | Fig. 18 |
| Qgs | Gate-Source Charge | 29 | nC | ||
| Qgd | Gate-Drain Charge | 34 | nC | ||
| Rg | Gate Input Resistance | 4.2 | f=1MHZ | ||
| EON | Turn-on Energy | 337 | J | VDS=800V, ID=20A, VGS=-3.5 to 20V, RG(ext)=2.0, L=290H | Fig. 19, 20 |
| EOFF | Turn-off Energy | 44 | J | ||
| td(on) | Turn-on Delay Time | 22 | ns | ||
| tr | Rise Time | 17 | ns | ||
| td(off) | Turn-off Delay Time | 17 | ns | ||
| tf | Fall Time | 12 | ns | ||
| Body Diode Characteristics (TC=25C unless otherwise specified) | |||||
| VSD | Forward Voltage | 4.7 | V | ISD=10A, VGS=0V | Fig. 10, 11, 12 |
| VSD | Forward Voltage | 4.2 | V | ISD=10A, VGS=0V, TJ=175C | |
| trr | Reverse Recovery Time | 40 | ns | VGS=0V, ISD=20A, VR=800V, di/dt=1100A/us, RG(ext)=11.0 | |
| Qrr | Reverse Recovery Charge | 57 | nC | ||
| IRRM | Peak Reverse Recovery Current | 4.7 | A | ||
2106062138_Slkor-SL42N120A_C2760945.pdf
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