Surface Mount 16V P Channel MOSFET Siliup SP2333T2 Designed for High Power Battery Switch and DC DC Converter
Key Attributes
Model Number:
SP2333T2
Product Custom Attributes
Drain To Source Voltage:
16V
Configuration:
-
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
19mΩ@4.5V;27mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
236pF
Number:
-
Output Capacitance(Coss):
255pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
1.275nF
Gate Charge(Qg):
14nC@4.5V
Mfr. Part #:
SP2333T2
Package:
SOT-23
Product Description
Product Overview
The SP2333T2 is a 16V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. It is suitable for surface mount applications and is ideal for use as a battery switch and in DC/DC converters. This MOSFET offers a low RDS(on) at various gate-source voltages, ensuring efficient operation.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP2333T2
- Channel Type: P-Channel
- Voltage Rating: 16V
- Package: SOT-23
- Marking: S33
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | -16 | V | ||||
| RDS(on) | @ -4.5V | 19 | 28 | m | ||
| ID | -6 | A | ||||
| RDS(on) | @ -2.5V | 27 | 40 | m | ||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -16 | V | |||
| Gate-Source Voltage | VGSS | 8 | V | |||
| Continuous Drain Current | ID | -6 | A | |||
| Pulse Drain Current | IDM | Tested | -24 | A | ||
| Power Dissipation | PD | 1.8 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 69 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -16 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-13V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=8V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.4 | -0.65 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-5A | 19 | 28 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V , ID=-4.3A | 27 | 40 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-6V , VGS=0V , f=1MHz | 1275 | pF | ||
| Output Capacitance | Coss | 255 | pF | |||
| Reverse Transfer Capacitance | Crss | 236 | pF | |||
| Total Gate Charge | Qg | VDS=-6V , VGS=-4.5V , ID=-5A | 14 | nC | ||
| Gate-Source Charge | Qgs | 2.3 | ||||
| Gate-Drain Charge | Qgd | 3.6 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-6V VGS=-4.5V , RG=1, ID=-4A | 26 | nS | ||
| Turn-On Rise Time | tr | 24 | ||||
| Turn-Off Delay Time | td(off) | 45 | ||||
| Turn-Off Fall Time | tf | 20 | ||||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Package Information (SOT-23) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| E1 | 2.25 | 2.55 | ||||
| e | (REF.) | 0.95 | ||||
| e1 | 1.80 | 2.00 | ||||
| L | (REF.) | 0.55 | ||||
| L1 | 0.30 | 0.50 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP2333T2_C41354941.pdf
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