30 Volt N Channel MOSFET Siliup SP30N27T2 Featuring Low RDS on and High Current Capability in SOT 23 Package
Key Attributes
Model Number:
SP30N27T2
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
27mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
53pF
Number:
1 N-channel
Output Capacitance(Coss):
68pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
745pF
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
SP30N27T2
Package:
SOT-23
Product Description
Product Overview
The SP30N27T2 is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers robust performance with key electrical characteristics and a compact SOT-23 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Package: SOT-23
- Device Code: 30N27
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 30 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 27 | 35 | m | |
| RDS(on) | @4.5V | 30 | 40 | m | ||
| RDS(on) | @2.5V | 40 | 50 | m | ||
| ID | ID | 5.8 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25, unless otherwise noted) | 30 | V | ||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | 5.8 | A | |||
| Pulse Drain Current | IDM | 23.2 | A | |||
| Power Dissipation | PD | 1.2 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 104 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.7 | 1.0 | 1.4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID =5.8A | - | 27 | 35 | m |
| RDS(ON) | VGS=4.5V , ID =5A | - | 30 | 40 | m | |
| RDS(ON) | VGS=2.5V , ID =4A | - | 40 | 50 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 745 | - | pF |
| Output Capacitance | Coss | - | 68 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 53 | - | pF | |
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=3A | - | 18 | - | nC |
| Gate-Source Charge | Qgs | - | 3 | - | nC | |
| Gate-Drain Charge | Qg | - | 2.2 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=15V VGS=10V , RG=3 , ID=3A | - | 5 | - | nS |
| Turn-On Rise Time | tr | - | 11 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 25 | - | nS | |
| Turn-Off Fall Time | tf | - | 3 | - | nS | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information | ||||||
| Package | SOT-23 | |||||
| Dimensions (mm) | A | 0.90 | 1.15 | |||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| E1 | 2.25 | 2.55 | ||||
| e | 0.95 REF. | |||||
| e1 | 1.80 | 2.00 | ||||
| L | 0.55 REF. | |||||
| L1 | 0.30 | 0.50 | ||||
| 0 | 8 | |||||
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP30N27T2 | SOT-23 | 3000 | ||||
2504101957_Siliup-SP30N27T2_C41354916.pdf
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