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quality High voltage NPN transistor Slkor MMBTA42 ideal for electronic circuits requiring 300 volt breakdown factory
quality High voltage NPN transistor Slkor MMBTA42 ideal for electronic circuits requiring 300 volt breakdown factory

High voltage NPN transistor Slkor MMBTA42 ideal for electronic circuits requiring 300 volt breakdown

Key Attributes
Model Number: MMBTA42
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
250nA
DC Current Gain:
200@10mA,10V
Transition Frequency(fT):
50MHz
Vce Saturation(VCE(sat)):
200mV@20mA,2mA
Type:
NPN
Pd - Power Dissipation:
350mW
Current - Collector(Ic):
300mA
Collector - Emitter Voltage VCEO:
300V
Mfr. Part #:
MMBTA42
Package:
SOT-23
Product Description

Product Overview

The MMBTA42 is an NPN transistor designed for high breakdown voltage applications. It features a low collector-emitter saturation voltage, making it suitable for various electronic circuits. This transistor is complementary to the MMBTA92 (PNP) transistor.

Product Attributes

  • Type: NPN TRANSISTOR
  • Model: MMBTA42
  • Complementary to: MMBTA92 (PNP)
  • Package: SOT-23
  • Manufacturer: slkormicro.com

Technical Specifications

Parameter Symbol Test Conditions Min Max Unit
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 300 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 300 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V
Collector cut-off current ICBO VCB=200V, IE=0 0.25 A
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A
DC current gain hFE(1) VCE= 10V, IC= 1mA 60
DC current gain hFE(2) VCE= 10V, IC=10mA 100 200
DC current gain hFE(3) VCE=10V, IC=30mA 60
Collector-emitter saturation voltage VCE(sat) IC=20mA, IB= 2mA 0.2 V
Base-emitter saturation voltage VBE(sat) IC= 20mA, IB=2mA 0.9 V
Transition frequency fT VCE= 20V, IC= 10mA, f=30MHz 50 MHz
Parameter Symbol Value Unit
Collector-Base Voltage VCBO 300 V
Collector-Emitter Voltage VCEO 300 V
Emitter-Base Voltage VEBO 5 V
Collector Current-Continuous IC 0.3 A
Collector Power dissipation PC 0.35 W
Thermal Resistance, junction to Ambient RJA 357 /W
Junction Temperature TJ 150
Storage Temperature Tstg -55 to +150
Symbol Dimensions In Millimeters Dimensions In Inches
A 0.900 - 1.150 0.035 - 0.045
A1 0.000 - 0.100 0.000 - 0.004
A2 0.900 - 1.050 0.035 - 0.041
b 0.300 - 0.500 0.012 - 0.020
c 0.080 - 0.150 0.003 - 0.006
D 2.800 - 3.000 0.110 - 0.118
E 1.200 - 1.400 0.047 - 0.055
E1 2.250 - 2.550 0.089 - 0.100
e 1.800 - 2.000 0.071 - 0.079
e1 0.300 - 0.500 0.012 - 0.020
L 0.550 REF 0.022 REF
L1 0.950 TYP 0.037 TYP
0 - 8 0 - 8

2401051154_Slkor-MMBTA42_C609809.pdf

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