General purpose medium current zener diode SMC BZT52B13 with 350mW power dissipation on ceramic PCB
Key Attributes
Model Number:
BZT52B13
Product Custom Attributes
Reverse Leakage Current (Ir):
100nA@8V
Pd - Power Dissipation:
350mW
Impedance(Zzt):
30Ω
Diode Configuration:
Independent
Zener Voltage(Range):
12.74V~13.26V
Zener Voltage(Nom):
13V
Impedance(Zzk):
170Ω
Mfr. Part #:
BZT52B13
Package:
SOD-123
Product Description
Product Overview
The BZT52B Series Zener Diodes are general-purpose, medium current devices with 350mW power dissipation on a ceramic PCB. They are ideally suited for automated assembly processes and are available in a lead-free version. This is a Halogen Free Device and all SMC parts are traceable to the wafer lot.
Product Attributes
- Brand: SMC Diode Solutions
- Origin: China, Germany, Korea, Singapore, United States
- Material: Molded Plastic (Case), Plated Leads (Terminals)
- Certifications: Halogen Free Device
Technical Specifications
| Model | Zener Voltage (Vz) @ Iz | Max. Zener Test Current (Iz) | Max. Zener Impedance (Zz) @ Iz | Max. Reverse Leakage (Ir) @ Vr | Forward Voltage (VF) @ IF | Power Dissipation (PD) | Junction Temperature (TJ) | Storage Temperature Range (TSTG) |
| BZT52B2V4 | 2.4V @ 5mA | 20mA | 100 @ 5mA | 10A @ 1V | 0.9V @ 10mA | 350mW (Note 1) | 150C | -55 to +150C |
| BZT52B43 | 43V @ 5mA | 20mA | 700 @ 5mA | 0.1A @ 33V | 0.9V @ 10mA |
Notes:
1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2
2. Short duration test pulse used to minimize self-heating effect
3. f = 1kHz
2409301633_SMC-BZT52B13_C499805.pdf
Related Products
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
