General Purpose NPN Transistor Slkor MMBT2222A SOT23 Package Ideal for Switching and Amplification
Key Attributes
Model Number:
MMBT2222A
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
6nA
DC Current Gain:
300@150mA,10V
Transition Frequency(fT):
300MHz
Number:
1 NPN
Vce Saturation(VCE(sat)):
1V@500mA,50mA
Type:
NPN
Pd - Power Dissipation:
225mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT2222A
Package:
SOT-23
Product Description
Product Overview
The MMBT2222 and MMBT2222A are NPN switching transistors designed for general-purpose applications. These devices offer a range of electrical characteristics suitable for various switching and amplification tasks. They are available in the SOT-23 package, providing a compact footprint for integration into electronic circuits.
Product Attributes
- Brand: slkormicro (implied from URL)
- Package Type: SOT-23
Technical Specifications
| Characteristic | Symbol | MMBT2222 | MMBT2222A | Unit | Notes |
|---|---|---|---|---|---|
| MAXIMUM RATINGS | |||||
| Collector-Emitter Voltage | VCEO | 30 | 40 | Vdc | |
| Collector-Base Voltage | VCBO | 60 | 75 | Vdc | |
| Emitter-Base Voltage | VEBO | 5.0 | 6.0 | Vdc | |
| Collector Current-Continuous | Ic | 600 | 600 | mAdc | |
| THERMAL CHARACTERISTICS | |||||
| Total Device Dissipation FR-5 Board | PD | 225 | mW | TA=25 | |
| Derate above 25 | 1.8 | mW/ | |||
| Total Device Dissipation Alumina Substrate | PD | 300 | mW | TA=25 | |
| Derate above 25 | 2.4 | mW/ | |||
| Thermal Resistance Junction to Ambient | RJA | 417 | /W | ||
| Solder Temperature/Solder Time | T/t | 260 | /S | ||
| Junction & Storage Temperature | TJ,Tstg | -55 to +150 | |||
| ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) | |||||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 30 | 40 | Vdc | (Ic=10mAdc,IB=0) |
| Collector-Base Breakdown Voltage | V(BR)CBO | 60 | 75 | Vdc | (Ic=10Adc,IE=0) |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5.0 | 6.0 | Vdc | (IE=10Adc,Ic=0) |
| Collector Cutoff Current | ICEX | 10 | nAdc | (VCE=60Vdc, VEB(Off)=3.0Vdc) | |
| Collector Cutoff Current | ICBO | 0.01 | 0.01 | Adc | (VCB=50Vdc,IE=0) |
| 10.0 | 10.0 | Adc | (VCB=60Vdc,IE=0,TA=125) | ||
| Emitter Cutoff Current | IEBO | 100 | nAdc | (VEB=3.0Vdc, IC=0) | |
| Base Cutoff Current | IBL | 20 | nAdc | (VCE=60Vdc, VEB(Off)=3.0Vdc) | |
| DC Current Gain | HFE | 35 | (Ic=0.1mAdc,VCE=10.0Vdc) | ||
| 50 | (Ic=1.0mAdc,VCE=10.0Vdc) | ||||
| 75 | (Ic=10mAdc,VCE=10.0Vdc) | ||||
| 35 | (Ic=10mAdc,VCE=10.0Vdc,TA=-55) | ||||
| 30 | 40 | (Ic=150mAdc,VCE=10.0Vdc)(3) | |||
| 50 | (Ic=150mAdc,VCE=1.0Vdc)(3) | ||||
| 30 | 40 | (Ic=500mAdc,VCE=10.0Vdc)(3) | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.4 | 0.3 | Vdc | (Ic=150mAdc, IB=15mAdc) |
| 1.6 | 1.0 | Vdc | (Ic=500mAdc, IB=50mAdc) | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 0.6 | Vdc | (Ic=150mAdc, IB=15mAdc) | |
| 1.3 | 1.2 | Vdc | (Ic=500mAdc, IB=50mAdc) | ||
| 2.6 | 2.0 | Vdc | |||
| SMALL-SIGNAL CHARACTERISTICS | |||||
| Current-Gain-Bandwidth Product | fT | 250 | 300 | MHz | (Ic=20mAdc,VCE=20Vdc,f=100MHz) |
| Output Capacitance | Cobo | 80 | pF | (VCB=10.0Vdc, IE=0, f=1.0MHz) | |
| Input Capacitance | Cibo | 30 | 25 | pF | (VEB=0.5Vdc, IC=0, f=1.0MHz) |
| Input Impedance | hie | 2.0 | 8.0 | k | (Ic=1.0mAdc,VCE=10Vdc,f=1.0kHz) |
| 0.25 | 1.25 | k | (Ic=10mAdc,VCE=10Vdc,f=1.0kHz) | ||
| Voltage Feedback Ratio | hre | 8.0 | 4.0 | (Ic=1.0mAdc,VCE=10Vdc,f=1.0kHz) | |
| -4 10-4 | (Ic=10mAdc,VCE=10Vdc,f=1.0kHz) | ||||
| Small-Signal Current Gain | hfe | 50 | 300 | (Ic=1.0mAdc,VCE=10Vdc,f=1.0kHz) | |
| 75 | 375 | (Ic=10mAdc,VCE=10Vdc,f=1.0kHz) | |||
| Output Admittance | hoe | 5.0 | 35 | mhos | (Ic=1.0mAdc,VCE=10Vdc,f=1.0kHz) |
| 25 | 200 | mhos | (Ic=10mAdc,VCE=10Vdc,f=1.0kHz) | ||
| Collector-Base Time Constant | rb,Cc | 150 | ps | (IE=20mAdc,VCB=20Vdc,f=31.8MHz) | |
| Noise Figure | NF | 4.0 | dB | (Ic=100uAdc,VCE=10Vdc,Rs=1.0k,f=1.0kHz) | |
| SWITCHING CHARACTERISTICS | |||||
| Delay Time | td | 10 | ns | (Vcc=30Vdc,VBE(off)=-0.5Vdc Ic=150mAdc,IB1=15mAdc) | |
| Rise Time | tr | 25 | ns | ||
| Storage Time | ts | 225 | ns | (Vcc=30Vdc,Ic=150mAdc, IB1=IB2=15mAdc) | |
| Fall Time | tf | 60 | ns | ||
SOT-23 Package Information
| Symbol | MIN. | MAX. | Units |
|---|---|---|---|
| A | 0.900 | 1.150 | mm |
| A1 | 0.000 | 0.100 | mm |
| A2 | 0.900 | 1.050 | mm |
| b | 0.300 | 0.500 | mm |
| c | 0.080 | 0.150 | mm |
| D | 2.800 | 3.000 | mm |
| E | 1.200 | 1.400 | mm |
| E1 | 2.250 | 2.550 | mm |
| e | 0.950 | TYP | |
| e1 | 1.800 | 2.000 | mm |
| L | 0.550 | REF | |
| L1 | 0.300 | 0.500 | mm |
| 0 | 8 |
2409302302_Slkor-MMBT2222A_C400799.pdf
Related Products
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
