SP015N13GHTH 150V N Channel Power MOSFET Featuring Fast Switching and Low Gate Charge TO252 Package
Key Attributes
Model Number:
SP015N13GHTH
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
22pF
Number:
1 N-channel
Output Capacitance(Coss):
293pF
Input Capacitance(Ciss):
2.23nF
Pd - Power Dissipation:
135W
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
SP015N13GHTH
Package:
TO-252
Product Description
Product Overview
The SP015N13GHTH is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), utilizing an advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. The device is provided in a TO-252 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP015N13GHTH
- Package: TO-252
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 150 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 55 | A | |||
| Continuous Drain Current (Tc=100) | ID | 38 | A | |||
| Pulsed Drain Current | IDM | 220 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 272 | mJ | |||
| Power Dissipation (Tc=25) | PD | 135 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.93 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250µA, VGS = 0V | 150 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 120V, VGS = 0V | - | - | 1 | µA |
| Gate Leakage Current | IGSS | VGS = ±20V, VDS = 0V | - | - | ±0.1 | µA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 13 | 16 | mΩ |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 75V, VGS = 0V, f = 1.0MHz | - | 2230 | - | pF |
| Output Capacitance | Coss | - | 293 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 22 | - | pF | |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=20A | - | 30 | - | nC |
| Gate-Source Charge | Qgs | - | 5.8 | - | nC | |
| Gate-Drain Charge | Qgd | - | 7 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 50V, ID =20A, RG = 6Ω | - | 13 | - | nS |
| Rise Time | tr | - | 25 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 31 | - | nS | |
| Fall Time | tf | - | 25 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 55 | A | |
| Body Diode Reverse Recovery Time | trr | IS=20A, di/dt=100A/us, TJ=25 | - | 65 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | 180 | - | nC | |
Note: 1. The test condition is VDD=50V, VGS=10V, L=0.5mH, RG=25Ω.
Package Information (TO-252):
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| Φ | 1.100 | 1.300 | 0.043 | 0.051 |
| θ | 0° | 8° | 0° | 8° |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. |
2504101957_Siliup-SP015N13GHTH_C22466812.pdf
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