Power MOSFET Siliup SP80N04HTQ 80V N Channel 145A Low RDSon TO2203L Package for DC DC Power Systems
Key Attributes
Model Number:
SP80N04HTQ
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
145A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
237pF
Number:
1 N-channel
Output Capacitance(Coss):
514pF
Input Capacitance(Ciss):
4.533nF
Pd - Power Dissipation:
244W
Gate Charge(Qg):
110nC@10V
Mfr. Part #:
SP80N04HTQ
Package:
TO-220-3L
Product Description
Product Overview
The SP80N04HTQ is an 80V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on). This device is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. The MOSFET is housed in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP80N04HTQ
- Package: TO-220-3L
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 80 | V | ||||
| RDS(on) TYP | @10V | 4.5 | m | |||
| ID | 145 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 80 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 145 | A | |||
| Continuous Drain Current (Tc=100) | ID | 100 | A | |||
| Pulsed Drain Current | IDM | 580 | A | |||
| Single Pulsed Avalanche Energy1 | EAS | 380 | mJ | |||
| Power Dissipation (Tc=25) | PD | 244 | W | |||
| Thermal Resistance, Junction-Case | RJC | 0.51 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 80 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=64V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 | 2.5 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=50A | - | 4.5 | 5.7 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=40V , VGS=0V , f=1MHz | - | 4533 | - | pF |
| Output Capacitance | Coss | - | 514 | - | ||
| Reverse Transfer Capacitance | Crss | - | 237 | - | ||
| Total Gate Charge | Qg | VDS=40V , VGS=10V , ID=40A | - | 110 | - | nC |
| Gate-Source Charge | Qgs | - | 24 | - | ||
| Gate-Drain Charge | Qgd | - | 44 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=40V, VGS=10V , RG=2.7 | - | 23 | - | ns |
| Rise Time | Tr | - | 84 | - | ||
| Turn-Off Delay Time | Td(off) | - | 48 | - | ||
| Fall Time | Tf | - | 64 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=40A , TJ=25 | - | - | 1.4 | V |
| Diode Continuous Current | IS | - | - | 145 | A | |
| Reverse Recover Time | Trr | ISD=40A, di/dt=100A/us, Tj=25 | - | 38 | - | ns |
| Reverse Recovery Charge | Qrr | - | 63 | - | nC | |
Note: 1. EAS is tested at starting Tj = 25, VDD=40V, VGS = 10V, L = 0.5mH, Rg=25.
Package Information (TO-220-3L)
| Symbol | Dimensions (mm) |
|---|---|
| A | 2.700 - 2.900 |
| B | 6.400 - 6.800 |
| C | 0.300 - 0.700 |
| D | 11 - 15 |
| E | 1.1 - 1.5 |
| F | 0.7 - 0.9 |
| G | 2.54 TYP |
| W | 9.8 - 10.2 |
| H | 4.3 - 4.7 |
| H1 | 2.2 - 2.5 |
| K | 2.7 - 3.1 |
| L | 14.8 - 16.8 |
| L1 | 9.0 - 9.4 |
| N | 1.2 - 1.4 |
| P | 12.7 - 13.3 |
| P1 | 7.6 - 8.2 |
| Q | 3.5 - 3.7 |
2506271720_Siliup-SP80N04HTQ_C49257260.pdf
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