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quality Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor Slkor BFR540 for Wideband Applications factory
quality Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor Slkor BFR540 for Wideband Applications factory

Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor Slkor BFR540 for Wideband Applications

Key Attributes
Model Number: BFR540
Product Custom Attributes
Emitter-Base Voltage(Vebo):
2.5V
Current - Collector Cutoff:
100nA
DC Current Gain:
250@40mA,8V
Transition Frequency(fT):
9GHz
Number:
1 NPN
Pd - Power Dissipation:
500mW
Current - Collector(Ic):
120mA
Collector - Emitter Voltage VCEO:
12V
Mfr. Part #:
BFR540
Package:
SOT-23
Product Description

Product Overview

The BFR540 is an NPN silicon epitaxial transistor designed for microwave low-noise amplification. It offers high power gain, wide bandwidth, low noise, low leakage current, small junction capacitance, and a large dynamic range with good current linearity. This transistor is ideal for applications in ultra-high frequency microwave, VHF, UHF, and CATV high-frequency wideband low-noise amplifiers. Typical applications include satellite TV tuners, CATV amplifiers, analog and digital cordless phones, radar detectors, wireless security alarms, RF modules, and repeater amplifiers in fiber optic transmission systems.

Product Attributes

  • Brand: SLKORMicro
  • Product Type: NPN Silicon Epitaxial Transistor
  • Application: Microwave Low-Noise Amplifier
  • Marking: 33W

Technical Specifications

Parameter Symbol Test Condition Min Typical Max Unit
Absolute Maximum Ratings (Tamb=25)
Collector-Base Breakdown Voltage BVCBO 20 V
Collector-Emitter Breakdown Voltage BVCEO 12 V
Emitter-Base Breakdown Voltage BVEBO 2.5 V
Collector Current IC 120 mA
Power Dissipation PT 500 mW
Maximum Junction Temperature TJ 150
Storage Temperature Tstg -65 +150
Electrical Characteristics & Specifications (Tamb=25)
Collector Cutoff Current ICBO VCB=8V, IE=0 0.1 A
DC Current Gain hFE VCE=8V, IC=40mA 60 120 250
Characteristic Frequency fT VCE=8V, IC=40mA 9 - GHz
Feedback Capacitance Cre IC=iC=0,VCB=8V,f=1MHz 0.6 - pF
Collector Capacitance CC IE=ie=0,VCB=8V,f=1MHz 0.9 - pF
Emitter Capacitance Ce IC=iC=0,VEB=0.5V,f=1MHz 2 - pF
Insertion Power Gain |S21| IC=40mA,VCE=8V,f=1GHz 12 13 - dB
Noise Figure NF VCE=8V,IC=10mA,f=900MHz 1.3 1.8 dB
Noise Figure NF VCE=8V,IC=40mA,f=900MHz 1.9 2.4 dB
Noise Figure NF VCE=8V,IC=10mA,f=2GHz 2.1 - dB
Maximum Unilateral Power Gain GUM IC=40mA,VCE=8V,f=900MHz 14 - dB
Maximum Unilateral Power Gain GUM IC=40mA,VCE=8V,f=2GHz 7 - dB
Output Voltage VO IC = 40mA; VCE = 8 V,ZL = ZS = 75 550 - mV
Output Power at 1dB Gain Compression PL1 IC=40mA,VCE=8V,RL=50,f=900MHz 21 - dBm
Third Order Intercept Point ITO -34 - dBm
Package Information
Package Type SOT23
Pin Connections 1: Base, 2: Emitter, 3: Collector

2508051530_Slkor-BFR540_C50087709.pdf

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