Ultrafast Recovery Diode SPTECH MUR6065PT Suitable for High Frequency Power Conditioning Applications
Key Attributes
Model Number:
MUR6065PT
Product Custom Attributes
Mfr. Part #:
MUR6065PT
Package:
TO-247
Product Description
Product Overview
The MUR6065PT is an ultrafast soft recovery FRED diode optimized for reduced losses and EMI/RFI in high-frequency power conditioning systems. Its soft recovery characteristic provides buffering in most applications, making it suitable for power converters and scenarios where switching losses are not a primary concern. Key advantages include ultrafast recovery, high operating junction temperature, high-frequency operation, low leakage current, and high surge capacity, all built upon an epitaxial chip construction.
Product Attributes
- Brand: MUR (Implied from product number)
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Values | Units |
|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | 650 | V | |
| Continuous forward current | IF(AV) | TA=110 | 75 | A |
| Single pulse forward current | IFSM | TA=25 | 680 | A |
| Maximum repetitive forward current | IFRM | Square wave, 20kHZ | 150 | A |
| Operating junction temperature | Tj | 175 | ||
| Storage temperatures | Tstg | -55 to +175 | ||
| Breakdown voltage / Blocking voltage | VBR | VR IR=100A | 650 | V |
| Forward voltage | VF | IF=75 A | 2.00 - 2.75 | V |
| Forward voltage | VF | IF=75 A, Tj =125 | 1.90 - 2.60 | V |
| Reverse leakage current | IR | VR= VRRM | 50 | A |
| Reverse leakage current | IR | Tj=150, VR=650V | 500 | A |
| Reverse recovery time | trr | IF=0.5A, IR=1A, IRR=0.25A | 80 | ns |
| Reverse recovery time | trr | IF=1A,VR=30V, di/dt =200A/us | 32 - 45 | ns |
| Junction-to-Case thermal resistance | RthJC | 0.80 | /W |
2511131740_SPTECH-MUR6065PT_C52741733.pdf
Related Products
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
