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quality General purpose transistor Slkor 2N2222A NPN silicon type with TO92 package and low leakage current factory
quality General purpose transistor Slkor 2N2222A NPN silicon type with TO92 package and low leakage current factory

General purpose transistor Slkor 2N2222A NPN silicon type with TO92 package and low leakage current

Key Attributes
Model Number: 2N2222A
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
400@5mA,5V
Transition Frequency(fT):
100MHz
Vce Saturation(VCE(sat)):
600mV@500mA,50mA
Type:
NPN
Pd - Power Dissipation:
625mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
2N2222A
Package:
TO-92
Product Description

Product Overview

The 2N2222 is a general-purpose NPN silicon transistor housed in a TO-92 plastic package. It is designed for general amplification applications and features low collector-to-emitter saturation voltage (VCE(sat)) and low leakage current (ICBO), enabling low-voltage operation. This transistor is suitable for a wide range of general-purpose amplification tasks.

Product Attributes

  • Package Type: TO-92 Plastic Package
  • Transistor Type: NPN Silicon

Technical Specifications

Parameter Name Symbol Test Condition Min Typical Max Unit
Collector-Base Voltage BVCBO IC = 100A, IE = 0 50 V
Collector-Emitter Voltage BVCEO IC = 100A, IB = 0 40 V
Emitter-Base Voltage BVEBO IE = 100A, IC = 0 5 V
Collector-Base Leakage Current ICBO VCB = 50V, IE = 0 0.1 A
Collector-Emitter Leakage Current ICEO VCE = 40V, IB = 0 0.1 A
Emitter-Base Leakage Current IEBO VEB = 5V, IC = 0 0.1 A
DC Current Gain HFE(1) VCE = 5V, IB = 1mA 90 250 400
DC Current Gain HFE(2) VCE = 5V, IB = 5mA 90 200 400
Collector Saturation Voltage VCESAT IC = 500mA, IB = 50mA 0.6 V
Base-Emitter Saturation Voltage VBESAT IC = 500mA, IB = 50mA 1.2 V
Transition Frequency fT VCE = 10V, IB = 50mA 100 MHz
Collector-Base Voltage BVCBO 50 V
Collector-Emitter Voltage BVCEO 40 V
Maximum Collector Current ICM 0.6 A
Power Dissipation PCM 0.625 W
Storage Junction Temperature Tj, Tstg -55 +150

Pin Configuration:

  • PIN 1: Collector
  • PIN 2: Base
  • PIN 3: Emitter

hFE Classifications & Marking:

hFE(1) classification and printing. Specific content subject to printing. Example marking: 2N 2222 XXXX. The 2N2222A model is also available.


2407231417_Slkor-2N2222A_C5330385.pdf

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