Plastic Encapsulated PNP Transistor Slkor MMBT3906T Ideal for Electronic Amplification and Switching

Key Attributes
Model Number: MMBT3906T
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
300@10mA,1V
Transition Frequency(fT):
250MHz
Type:
PNP
Vce Saturation(VCE(sat)):
400mV@50mA,5mA
Pd - Power Dissipation:
150mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT3906T
Package:
SOT-523
Product Description

Product Overview

The MMBT3906T is a plastic-encapsulated PNP transistor featuring epitaxial planar die construction. It offers complementary NPN types and is available in a lead-free version. This transistor is designed for various electronic applications requiring reliable switching and amplification capabilities.

Product Attributes

  • Package Outline: SOT-523
  • Transistor Type: PNP
  • Model Number: MMBT3906T

Technical Specifications

Symbol Parameter Test Conditions Min Typ Max Units
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -40 V
VEBO Emitter-Base Voltage -5.0 V
IC Collector Current - Continuous -200 mA
PC Collector Power Dissipation 150 mW
RJA Thermal Resistance, Junction to Ambient 833 /W
TJ Operating Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
V(BR)CBO Collector-base breakdown voltage IC=-10A, IE=0 -40 V
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA, IB=0 -40 V
V(BR)EBO Emitter-base breakdown voltage IE=-10A, IC=0 -5 V
ICBO Collector cut-off current VCB=-30V, IE=0 -0.1 A
IEBO Emitter cut-off current VEB=-5V, IC=0 -0.1 A
hFE DC current gain VCE=-1V, IC=-0.1mA 60
VCE=-1V, IC=-1mA 80
VCE=-1V, IC=-10mA 100 300
VCE=-1V, IC=-50mA 60
VCE=-1V, IC=-100mA 30
VCE(sat) Collector-emitter saturation voltage IC=-10mA, IB=-1mA -0.25 V
IC=-50mA, IB=-5mA -0.4 V
VBE(sat) Base-emitter saturation voltage IC=-10mA, IB=-1mA -0.65 -0.85 V
IC=-50mA, IB=-5mA -0.95 V
fT Transition frequency VCE=-20V, IC=-10mA, f=100MHz 250 MHz
Cobo Collector output capacitance VCB=-5V, IE=0, f=1MHz 4.5 pF
Ciob Input capacitance VEB=-0.5V, IE=0, f=1MHz 10 pF
NF Noise figure VCE=-5V, IC=0.1mA, f 4 dB
td Delay time 35 ns
tr Rise time VCC=-3V, VBE(OFF)=-0.5V, IC=-10mA, IB1=-1mA 35 ns
tS Storage time 225 ns
tf Fall time VCC=-3V, IC=-10mA, IB1= IB2=-1mA 75 ns
ICEX Collector cut-off current VCB=-30V, VBE(off)=-3V -0.05 A

Package Pinout: SOT-523
1. BASE
2. EMITTER
3. COLLECTOR


2409291134_Slkor-MMBT3906T_C5186023.pdf

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