60V Dual N Channel MOSFET Siliup SP60N23DNK with Single Pulse Avalanche Energy Testing and Halogen Free Package
Key Attributes
Model Number:
SP60N23DNK
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
23mΩ@10V;30mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
97pF
Number:
2 N-Channel
Output Capacitance(Coss):
123pF
Pd - Power Dissipation:
35W
Input Capacitance(Ciss):
1.304nF
Gate Charge(Qg):
25.3nC@10V
Mfr. Part #:
SP60N23DNK
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The SP60N23DNK is a 60V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, a surface mount package, and is ROHS Compliant & Halogen-Free. The device undergoes 100% Single Pulse avalanche energy testing. It is suitable for applications such as DC-DC Converters and Motor Control.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60N23DNK
- Device Code: 60N23D
- Package: PDFN5X6-8L
- Certifications: ROHS Compliant & Halogen-Free
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 60 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 23 | 30 | m | |
| RDS(on)TYP | RDS(on) | @4.5V | 30 | 40 | m | |
| ID | ID | 20 | A | |||
| Absolute maximum ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | 20 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 13 | A | |||
| Pulse Drain Current Tested | IDM | 80 | A | |||
| Single pulsed avalanche energy | EAS | 56 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 35 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 3.6 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =20A | - | 23 | 30 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =15A | - | 30 | 40 | m |
| Input Capacitance | Ciss | VDS=30V , VGS=0V , f=1MHz | - | 1304 | - | pF |
| Output Capacitance | Coss | - | 123 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 97 | - | pF | |
| Total Gate Charge | Qg | VDS=30V , VGS=10V , ID=10A | - | 25.3 | - | nC |
| Gate-Source Charge | Qgs | - | 4.7 | - | nC | |
| Gate-Drain Charge | Qg d | - | 6.1 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=30V VGS=10V , RG=3, ID=2A | - | 6 | - | nS |
| Rise Time | Tr | - | 6.1 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 17 | - | nS | |
| Fall Time | Tf | - | 3 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 20 | A | |
| Reverse recover time | Trr | IS=10A, di/dt=100A/us, TJ=25 | - | 27 | - | nS |
| Reverse recovery charge | Qrr | - | 48 | - | nC | |
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 | 1.000 | 0.035 | 0.039 | ||
| A3 | 0.254 REF. | 0.010 REF. | ||||
| D | 4.944 | 5.096 | 0.195 | 0.201 | ||
| E | 5.974 | 6.126 | 0.235 | 0.241 | ||
| D1 | 1.470 | 1.870 | 0.058 | 0.074 | ||
| D2 | 0.470 | 0.870 | 0.019 | 0.034 | ||
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | ||
| D3 | 4.824 | 4.976 | 0.190 | 0.196 | ||
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | ||
| k | 1.190 | 1.390 | 0.047 | 0.055 | ||
| b | 0.350 | 0.450 | 0.014 | 0.018 | ||
| e | 1.270 TYP. | 0.050 TYP. | ||||
| L | 0.559 | 0.711 | 0.022 | 0.028 | ||
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | ||
| H | 0.574 | 0.726 | 0.023 | 0.029 | ||
| 10 | 12 | 10 | 12 | |||
2504101957_Siliup-SP60N23DNK_C41355076.pdf
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