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quality Silicon Epitaxial Planar Transistor Model Slkor MMDT5401 Suitable for High Voltage Amplifier Circuits factory
quality Silicon Epitaxial Planar Transistor Model Slkor MMDT5401 Suitable for High Voltage Amplifier Circuits factory

Silicon Epitaxial Planar Transistor Model Slkor MMDT5401 Suitable for High Voltage Amplifier Circuits

Key Attributes
Model Number: MMDT5401
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
DC Current Gain:
240@10mA,5V
Transition Frequency(fT):
300MHz
Vce Saturation(VCE(sat)):
500mV@50mA,5mA
Type:
PNP
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-
Mfr. Part #:
MMDT5401
Package:
SOT-363
Product Description

Product Overview

The MMDT5401 is a PNP Silicon Epitaxial Planar Transistor designed for high voltage amplifier applications. It offers specific DC current gain characteristics and breakdown voltage ratings, making it suitable for various electronic circuits requiring amplification in high voltage environments.

Product Attributes

  • Type: PNP Silicon Epitaxial Planar Transistor
  • Model: MMDT5401
  • Package: SOT-363
  • Manufacturer: SLKOR Microelectronics

Technical Specifications

Absolute Maximum Ratings (Ta = 25) Symbol Value Unit
Collector Base Voltage -VCBO 160 V
Collector Emitter Voltage -VCEO 150 V
Emitter Base Voltage -VEBO 5 V
Collector Current Continuous -IC 600 mA
Power Dissipation Ptot 200 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 to +150
Characteristics at Ta = 25 Symbol Min. Max. Unit
DC Current Gain at -VCE = 5 V, -IC = 1 mA hFE 50 - -
at -VCE = 5 V, -IC = 10 mA hFE 60 240 -
at -VCE = 5 V, -IC = 50 mA hFE 50 - -
Collector Base Cutoff Current at -VCB = 120 V -ICBO - 50 nA
Emitter Base Cutoff Current at -VEB = 3 V -IEBO - 50 nA
Collector Base Breakdown Voltage at -IC = 100 A -V(BR)CBO 160 - V
Collector Emitter Breakdown Voltage at -IC = 1 mA -V(BR)CEO 150 - V
Emitter Base Breakdown Voltage at -IE = 10 A -V(BR)EBO 5 - V
Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA -VCE(sat) - 0.2 V
at -IC = 50 mA, -IB = 5 mA -VCE(sat) - 0.5 V
Base Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA -VBE(sat) - 1 V
at -IC = 50 mA, -IB = 5 mA -VBE(sat) - 1 V
Gain Bandwidth Product at -VCE = 10 V, -IC = 10 mA, f = 100 MHz fT 100 300 MHz
Output Capacitance at -VCB=10 V, f = 1 MHz Cobo - 6 pF
Simplified outline(SOT-363) Pinout
Pin 1 Pin 2 Pin 3 Pin 4 Pin 5 Pin 6
Emitter Base Collector Emitter Base Collector
DIMENSIONS (mm)
A A1 bp c D E e e1 HE Lp Q w v y
0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0
0.2 0.1 0.2 0.45 0.15 0.25 0.15 1.1 0.8 - - - - -
Fig.1 Max Power Dissipation vs Ambient Temperature
Ambient Temperature: Ta () 0 25 100 150
Power Dissipation: Ptot (mW) 100 200 50 0

2309281726_Slkor-MMDT5401_C18208590.pdf

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