86--136 6733 2386
quality NPN Transistor Slkor PBSS304 with 60V Collector Emitter Voltage and 5A Continuous Collector Current factory
quality NPN Transistor Slkor PBSS304 with 60V Collector Emitter Voltage and 5A Continuous Collector Current factory

NPN Transistor Slkor PBSS304 with 60V Collector Emitter Voltage and 5A Continuous Collector Current

Key Attributes
Model Number: PBSS304
Product Custom Attributes
Current - Collector Cutoff:
500nA
Emitter-Base Voltage(Vebo):
7V
DC Current Gain:
40@10A,1V
Transition Frequency(fT):
130MHz
Vce Saturation(VCE(sat)):
230mV@6A,300mA
Type:
NPN
Pd - Power Dissipation:
2.1W
Current - Collector(Ic):
5A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
PBSS304
Package:
SOT-89
Product Description

Product Overview

This NPN transistor, model PBSS304, is designed for high-current applications with a BVCEO exceeding 60V and a high continuous collector current of 5A. It features a low equivalent on-resistance (RSAT = 30m) and a low saturation voltage (VCE(SAT) < 65mV @ IC = 1A), ensuring efficient operation. The device offers high current gain (hFE) specified up to 10A, making it suitable for demanding scenarios. It is constructed with a lead-free, RoHS-compliant, halogen-free, and antimony-free "Green" molding compound. The PBSS304 is ideal for emergency lighting circuits, motor driving (including DC fans), backlight inverters, power switches, and gate driving MOSFETs and IGBTs.

Product Attributes

  • Brand: SLKORMICRO (implied by URL)
  • Material: Molded Plastic ("Green" Molding Compound)
  • Finish: Lead-Free, RoHS Compliant
  • Environmental: Halogen and Antimony Free ("Green" Device)
  • Compliance: PPAP Capable
  • Package Type: SOT89

Technical Specifications

Characteristic Symbol Value Unit Test Condition
Collector-Base Voltage VCBO 150 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 7 V
Base Current IB 2 A
Continuous Collector Current IC 5 A
Peak Pulse Current ICM 20 A
Power Dissipation (Note 6) PD 1.5 W @TA = +25C
Linear Derating Factor (Note 6) 12 mW/C
Power Dissipation (Note 7) PD 2.1 W @TA = +25C
Linear Derating Factor (Note 7) 16.8 mW/C
Thermal Resistance, Junction to Ambient (Note 6) RJA 83 C/W
Thermal Resistance, Junction to Ambient (Note 7) RJA 60 C/W
Thermal Resistance, Junction to Leads (Note 8) RJL 3.23 C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Collector-Base Breakdown Voltage BVCBO 150 (Typ 190) V IC = 100A
Collector-Emitter Breakdown Voltage (Note 10) BVCER 150 (Typ 190) V IC = 1A, RB 1k
Collector-Emitter Breakdown Voltage (Note 10) BVCEO 60 (Typ 80) V IC = 10mA
Emitter-Base Breakdown Voltage BVEBO 7 (Typ 8.1) V IE = 100A
Collector Cutoff Current ICBO < 1 (Max 500) nA VCB = 120V, TA = +25C
Collector Cutoff Current ICBO < 1 (Max 500) nA VCB = 120V, TA = +100C
Collector Cutoff Current ICER < 1 (Max 100) nA R 1k, VCB = 120V, TA = +25C
Collector Cutoff Current ICER < 1 (Max 100) nA R 1k, VCB = 120V, TA = +100C
Emitter Cutoff Current IEBO < 1 (Max 10) nA VEB = 6V
DC Current Transfer Ratio (Note 10) hFE 100-200 IC = 10mA, VCE = 1V
DC Current Transfer Ratio (Note 10) hFE 100-300 IC = 2A, VCE = 1V
DC Current Transfer Ratio (Note 10) hFE 55-105 IC = 5A, VCE = 1V
DC Current Transfer Ratio (Note 10) hFE 20-40 IC = 10A, VCE = 1V
Collector-Emitter Saturation Voltage (Note 10) VCE(SAT) 17-30 mV IC = 100mA, IB = 5mA
Collector-Emitter Saturation Voltage (Note 10) VCE(SAT) 35-55 mV IC = 1A, IB = 100mA
Collector-Emitter Saturation Voltage (Note 10) VCE(SAT) 40-65 mV IC = 1A, IB = 50mA
Collector-Emitter Saturation Voltage (Note 10) VCE(SAT) 90-125 mV IC = 2A, IB = 50mA
Collector-Emitter Saturation Voltage (Note 10) VCE(SAT) 170-230 mV IC = 6A, IB = 300mA
Base-Emitter Saturation Voltage (Note 10) VBE(SAT) 970-1100 mV IC = 6A, IB = 300mA
Base-Emitter Turn-on Voltage (Note 10) VBE(ON) 910-1050 mV IC = 6A, VCE = 1V
Transitional Frequency fT 130 MHz IC = 100mA, VCE = 10V, f = 50MHz
Output Capacitance COBO 31 pF VCB = 10V, f = 1MHz
Switching Time (Turn-on) tON 42 ns VCC = 10V, IC = 1A, IB1 = -IB2 = 100mA
Switching Time (Turn-off) tOFF 760 ns VCC = 10V, IC = 1A, IB1 = -IB2 = 100mA
Weight 0.05 (Approximate) grams

Note: 10. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%.


2410121549_Slkor-PBSS304_C5122583.pdf

Related Products
quality power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW factory
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
quality NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component factory
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
quality Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks factory
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
quality YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies factory
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.