High voltage IGBT SPTECH SPT40N120F1C offering performance in solar inverters and welding equipment
Key Attributes
Model Number:
SPT40N120F1C
Product Custom Attributes
Td(off):
230ns
Pd - Power Dissipation:
417W
Operating Temperature:
-40℃~+150℃
Td(on):
60ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@250uA
Gate Charge(Qg):
270nC@15V
Reverse Recovery Time(trr):
250ns
Switching Energy(Eoff):
800uJ
Turn-On Energy (Eon):
2.9mJ
Mfr. Part #:
SPT40N120F1C
Package:
TO-247-3
Product Description
Product Overview
The SPT40N120F1C is a high-performance IGBT with Trench-Stop Technology, offering exceptional reliability and efficiency. It features a high breakdown voltage of 1200V, high-speed switching, and excellent ruggedness. Its positive temperature coefficient in VCEsat ensures easy parallel switching, and it boasts enhanced avalanche capability. This product is ideal for demanding applications such as Uninterruptible Power Supplies, Solar Inverters, Welding, and PFC applications.
Product Attributes
- Brand: SPTECH
- Product Package: SPT40N120F1C TO247 Tube
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Emitter Breakdown Voltage | VCE | 1200 | V | |
| DC collector current | IC | 80 / 40 | A | TC = 25C / TC = 100C |
| Diode Forward current | IF | 80 / 40 | A | TC = 25C / TC = 100C |
| Continuous Gate-emitter voltage | VGE | ±20 | V | |
| Transient Gate-emitter voltage | VGE | ±30 | V | |
| Pulsed Collector Current | ICM | 160 | A | VGE =15V, tp limited by Tjmax |
| Diode Pulsed Current | IFpuls | 160 | A | tp limited by Tjmax |
| Short Circuit Withstand Time | Tsc | 10 | μs | VGE= 15V, VCE≤ 600V |
| Power dissipation | Ptot | 417 | W | Tj=25°C |
| Operating junction temperature | Tj | -40...+150 | °C | |
| Storage temperature | Ts | -55...+150 | °C | |
| IGBT thermal resistance, junction - case | Rθ(j-c) | 0.3 | K/W | |
| Diode thermal resistance, junction - case | Rθ(j-c) | 0.7 | K/W | |
| Thermal resistance, junction - ambient | Rθ(j-a) | 40 | K/W | |
| Static Collector-Emitter breakdown voltage | BVCES | 1200 / 1300 | V | VGE=0V , IC=250μA |
| Gate threshold voltage | VGE(th) | 5.1 / 5.8 / 6.4 | V | VGE=VCE, IC=250μA |
| Collector-Emitter Saturation voltage | VCE(sat) | 2.0 / 2.5 | V | VGE=15V, IC=40A, Tj = 25°C / Tj = 150°C |
| Zero gate voltage collector current | ICES | 10 / 2500 | μA | VCE = 1200V, VGE = 0V, Tj = 25°C / Tj = 150°C |
| Gate-emitter leakage current | IGES | 100 | nA | VCE = 0V, VGE = ± 20V |
| Transconductance | gfs | 15 | S | VCE=20V, IC=15A |
| Input capacitance | Cies | 4400 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Output capacitance | Coes | 180 | pF | |
| Reverse transfer capacitance | Cres | 100 | pF | |
| Gate charge | QG | 270 | nC | VCC = 960V, IC = 40A, VGE = 15V |
| Short circuit collector current | ICSC | 240 | A | VGE=15V,tSC≤10us, VCC=600V, Tjstart=25°C |
| Turn-on delay time | td(on) | 60 | ns | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=12Ω, Tj = 25°C |
| Rise time | tr | 27 | ns | |
| Turn-on energy | Eon | 2.9 | mJ | |
| Turn-off delay time | td(off) | 230 | ns | |
| Fall time | tf | 70 | ns | |
| Turn-off energy | Eoff | 0.8 | mJ | |
| Diode Forward Voltage | VFM | 2.6 | V | IF = 40A |
| Reverse Recovery Time | Trr | 250 | ns | IF= 40A, VR = 600V, di/dt= 400A/μs |
| Reverse Recovery Current | Irr | 15 | A | |
| Reverse Recovery Charge | Qrr | 600 | nC |
2505231205_SPTECH-SPT40N120F1C_C480184.pdf
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