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quality Silicon transistor Slkor 13001 featuring 400 volt collector emitter voltage and compact SOT23 package design factory
quality Silicon transistor Slkor 13001 featuring 400 volt collector emitter voltage and compact SOT23 package design factory

Silicon transistor Slkor 13001 featuring 400 volt collector emitter voltage and compact SOT23 package design

Key Attributes
Model Number: 13001
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100uA
DC Current Gain:
10@20mA,20V
Transition Frequency(fT):
8MHz
Number:
1 NPN
Vce Saturation(VCE(sat)):
500mV@100mA,20mA
Type:
NPN
Pd - Power Dissipation:
750mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-
Mfr. Part #:
13001
Package:
SOT-23
Product Description

Product Overview

This product is a general-purpose NPN silicon transistor designed for various electronic applications. It features a high collector-emitter voltage (VCEO) of 400V and a continuous collector current (Ic) of 0.2A, with a power dissipation (PC) of 750mW. The transistor is housed in an SOT-23 package, making it suitable for compact designs.

Product Attributes

  • Brand: SLKOR
  • Model Number: 13001
  • Material: Silicon
  • Package Type: SOT-23

Technical Specifications

Parameter Symbol Limit/Test Conditions Unit
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Collector-Base Voltage VCBO 600 V
Collector-Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 7 V
Collector Current - Continuous IC 0.2 A
Power Dissipation PC 0.75 W
Junction Temperature TJ 150
Storage Temperature TSTG -55+150
Electrical Characteristics (TJ=25 unless otherwise noted)
Collector-Base Breakdown Voltage VCBO Ic=0.1mA, IE=0 600 V
Collector-Emitter Breakdown Voltage VCEO Ic=1mA, IB=0 400 V
Emitter-Base Breakdown Voltage VEBO IE=0.1mA, IC=0 7 V
Base-Emitter Voltage VBE IE=100mA 1.1 V
Collector Cut-off Current ICBO VCB=600V, IE=0 100 A
Collector Cut-off Current ICEO VCE=400V, IB=0 100 A
Emitter Cut-off Current IEBO VEB=7V, IC=0 100 A
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=20mA 0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=20mA 1.2 V
DC Current Gain hFE(1) VCE=20V, IC=20mA 10 - 70
DC Current Gain hFE(2) VCE=10V, IC=0.25mA 5 -
Storage Time ts IC=50mA, IB1=-IB2=5mA, VCC=45V 1.5 s
Fall Time tf IC=50mA, IB1=-IB2=5mA, VCC=45V 0.3 s
Transition Frequency fT VCE=20V, IC=20mA, f=1MHz 8 MHz

2410010403_Slkor-13001_C2965545.pdf

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