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quality Electronic circuit PNP transistor Slkor MMBT2907 designed for amplification and switching performance factory
quality Electronic circuit PNP transistor Slkor MMBT2907 designed for amplification and switching performance factory

Electronic circuit PNP transistor Slkor MMBT2907 designed for amplification and switching performance

Key Attributes
Model Number: MMBT2907
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
20nA
DC Current Gain:
100@150mA,10V
Transition Frequency(fT):
200MHz
Vce Saturation(VCE(sat)):
400mV
Type:
PNP
Pd - Power Dissipation:
250mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT2907
Package:
SOT-23
Product Description

Product Overview

The MMBT2907 is a PNP epitaxial planar transistor designed for general-purpose applications. It features complementary NPN type availability (MMBT2222). This transistor is suitable for various electronic circuits requiring amplification and switching functions.

Product Attributes

  • Brand: slkormicro (implied by URL)
  • Product Type: PNP Transistor
  • Complementary Type: MMBT2222 (NPN)
  • Package: SOT-23

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings (Ta=25 unless otherwise noted)
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5 V
Collector Current - Continuous IC -600 mA
Total Device Dissipation PD 250 mW
Junction Temperature TJ 150
Storage Temperature Tstg -55 150
Electrical Characteristics (Ta=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=-10A,IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO* IC=-10mA,IB=0 -40 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -5 V
Collector cut-off current ICBO VCB=-50V,IE=0 -20 nA
Base cut-off current IEBO VEB=-3V, IC =0 -10 nA
DC current gain hFE(1)* VCE=-10V,IC=-150mA 100 300
DC current gain hFE(2)* VCE=-10V,IC=-0.1mA 52
DC current gain hFE(3) VCE=-10V,IC=-500mA 32
Collector-emitter saturation voltage VCE(sat)* IC=-150mA,IB=-15mA -0.4 V
Collector-emitter saturation voltage VCE(sat)* IC=-500mA,IB=-50mA -0.67 V
Base-emitter saturation voltage VBE(sat)* IC=-150mA,IB=-15mA -1 V
Base-emitter saturation voltage VBE(sat)* IC=-500mA,IB=-50mA -1.2 V
Transition frequency fT VCE=-20V,IC=-50mA,f=100MHz 200 MHz
Delay time td 10 ns
Rise time tr VCE=-30V,IC=-150mA,IB1=-15mA 25 ns
Storage time tS 225 ns
Fall time tf VCE=-6V,IC=-150mA, IB1=- IB2=- 15mA 60 ns
Thermal Resistance Junction to Ambient RJA 500 /W
*Pulse test: tp300s, 0.02.
SOT-23 Package Outline Dimensions
Symbol Dimensions In Millimeters Dimensions In Inches
A 0.900 - 1.150 0.035 - 0.045
A1 0.000 - 0.100 0.000 - 0.004
A2 0.900 - 1.050 0.035 - 0.041
b 0.300 - 0.500 0.012 - 0.020
c 0.080 - 0.150 0.003 - 0.006
D 2.800 - 3.000 0.110 - 0.118
E 1.200 - 1.400 0.047 - 0.055
E1 2.250 - 2.550 0.089 - 0.100
e 1.800 - 2.000 0.071 - 0.079
e1 0.950 TYP 0.037 TYP
L 0.300 - 0.500 0.012 - 0.020
L1 0.550 REF 0.022 REF
0 - 8 0 - 8
Pinout: 1. BASE, 2. EMITTER, 3. COLLECTOR

2005211106_Slkor-MMBT2907_C556170.pdf

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